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Article: A deep level transient spectroscopy study of electron irradiation induced deep levels in p-type 6H–SiC

TitleA deep level transient spectroscopy study of electron irradiation induced deep levels in p-type 6H–SiC
Authors
KeywordsPhysics engineering
Issue Date1999
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 1999, v. 85 n. 10, p. 7120-7122 How to Cite?
Abstract1.7 MeV electron irradiation-induced deep levels in p-type 6H–SiC have been studied using deep level transient spectroscopy. Two deep hole traps are observed, which are located at EV+0.55 eV and EV+0.78 eV. They have been identified as two different defects because they have different thermal behaviors. These defects at EV+0.55 eV and EV+0.78 eV are annealed out at 500–200 °C, respectively, and are different from the main defects E1/E2, Z1/Z2 observed in electron irradiated n-type 6H–SiC. This indicates that new defects have been formed in p-type 6H–SiC during electron irradiation. ©1999 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42189
ISSN
2019 Impact Factor: 2.286
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorGong, Men_HK
dc.contributor.authorFung, SHYen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorYou, Zen_HK
dc.date.accessioned2007-01-08T02:31:17Z-
dc.date.available2007-01-08T02:31:17Z-
dc.date.issued1999en_HK
dc.identifier.citationJournal of Applied Physics, 1999, v. 85 n. 10, p. 7120-7122-
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42189-
dc.description.abstract1.7 MeV electron irradiation-induced deep levels in p-type 6H–SiC have been studied using deep level transient spectroscopy. Two deep hole traps are observed, which are located at EV+0.55 eV and EV+0.78 eV. They have been identified as two different defects because they have different thermal behaviors. These defects at EV+0.55 eV and EV+0.78 eV are annealed out at 500–200 °C, respectively, and are different from the main defects E1/E2, Z1/Z2 observed in electron irradiated n-type 6H–SiC. This indicates that new defects have been formed in p-type 6H–SiC during electron irradiation. ©1999 American Institute of Physics.en_HK
dc.format.extent55113 bytes-
dc.format.extent9781 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physics-
dc.rightsCopyright 1999 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 1999, v. 85 n. 10, p. 7120-7122 and may be found at https://doi.org/10.1063/1.370520-
dc.subjectPhysics engineeringen_HK
dc.titleA deep level transient spectroscopy study of electron irradiation induced deep levels in p-type 6H–SiCen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=85&issue=10&spage=7120&epage=7122&date=1999&atitle=A+deep+level+transient+spectroscopy+study+of+electron+irradiation+induced+deep+levels+in+p-type+6H–SiCen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.370520en_HK
dc.identifier.scopuseid_2-s2.0-0000206203-
dc.identifier.hkuros40644-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0000206203&selection=ref&src=s&origin=recordpage-
dc.identifier.volume85-
dc.identifier.issue10-
dc.identifier.spage7120-
dc.identifier.epage7122-
dc.identifier.isiWOS:000080136000016-
dc.publisher.placeUnited States-
dc.identifier.scopusauthoridGong, M=9273057400-
dc.identifier.scopusauthoridFung, S=7201970040-
dc.identifier.scopusauthoridBeling, CD=7005864180-
dc.identifier.scopusauthoridYou, Z=7102207882-
dc.identifier.issnl0021-8979-

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