Aluminum-implantation-induced deep levels in n-type 6H–SiC

Abstract

Deep-level defect centers on the n-side of p+n junction diodes formed by low and elevated temperature aluminum-ion implantation into n-type 6H–SiC have been studied using deep-level transient spectroscopy. Two shallow Al-acceptor levels have been observed in the n region just beyond the implantation depth through their minority-carrier emission signatures. The dominant level is situated at 0.26 eV above the valence band and is accompanied by a shallower level of small intensity. Comparison with photoluminescence results suggests the dominant level (labeled Ak) and the shallower level (labeled Ah), are associated with the cubic and hexagonal lattice sites, respectively. Unlike previously reported results, which show many different implantation-induced donors within the implantation region, only one deep donor level at EC – 0.44 eV is found to occur in the postimplantation region, indicating that the various crystal damage sites occur with different spatial distributions. ©1998 American Institute of Physics.