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Article: Characterization of Pt-Si interface by spectroscopic ellipsometry
Title | Characterization of Pt-Si interface by spectroscopic ellipsometry |
---|---|
Authors | |
Keywords | Physics engineering |
Issue Date | 1994 |
Publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp |
Citation | Journal of Applied Physics, 1994, v. 76 n. 11, p. 7423-7427 How to Cite? |
Abstract | Spectroscopic ellipsometric measurements for Pt/n-Si samples with different thickness of Pt films have been performed. The thickness of the Pt films determined with the three-phase model (air/Pt/Si) changes with the wavelength λ while that with the four-phase model (air/Pt/interface layer/Si) remains unchanged, showing the existence of an interface layer. At the same time, the apparent optical dielectric constants of the interface layer as a function of λ are also obtained. A calculation based on the effective medium theory is carried out to simulate the optical dielectric data of the interface layer. Some structural information of the interface layer is obtained from the calculation. © 1994 American Institute of Physics. |
Persistent Identifier | http://hdl.handle.net/10722/42184 |
ISSN | 2023 Impact Factor: 2.7 2023 SCImago Journal Rankings: 0.649 |
ISI Accession Number ID |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Liu, YC | en_HK |
dc.contributor.author | Chen, TP | en_HK |
dc.contributor.author | Fung, S | en_HK |
dc.contributor.author | Beling, CD | en_HK |
dc.date.accessioned | 2007-01-08T02:31:12Z | - |
dc.date.available | 2007-01-08T02:31:12Z | - |
dc.date.issued | 1994 | en_HK |
dc.identifier.citation | Journal of Applied Physics, 1994, v. 76 n. 11, p. 7423-7427 | - |
dc.identifier.issn | 0021-8979 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/42184 | - |
dc.description.abstract | Spectroscopic ellipsometric measurements for Pt/n-Si samples with different thickness of Pt films have been performed. The thickness of the Pt films determined with the three-phase model (air/Pt/Si) changes with the wavelength λ while that with the four-phase model (air/Pt/interface layer/Si) remains unchanged, showing the existence of an interface layer. At the same time, the apparent optical dielectric constants of the interface layer as a function of λ are also obtained. A calculation based on the effective medium theory is carried out to simulate the optical dielectric data of the interface layer. Some structural information of the interface layer is obtained from the calculation. © 1994 American Institute of Physics. | en_HK |
dc.format.extent | 582451 bytes | - |
dc.format.extent | 9781 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.format.mimetype | text/plain | - |
dc.language | eng | en_HK |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp | en_HK |
dc.relation.ispartof | Journal of Applied Physics | en_HK |
dc.rights | Copyright 1994 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 1994, v. 76 n. 11, p. 7423-7427 and may be found at https://doi.org/10.1063/1.357968 | - |
dc.subject | Physics engineering | en_HK |
dc.title | Characterization of Pt-Si interface by spectroscopic ellipsometry | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=76&issue=11&spage=7423&epage=7427&date=1994&atitle=Characterization+of+Pt-Si+interface+by+spectroscopic+ellipsometry | en_HK |
dc.identifier.email | Fung, S: sfung@hku.hk | en_HK |
dc.identifier.email | Beling, CD: cdbeling@hkucc.hku.hk | en_HK |
dc.identifier.authority | Fung, S=rp00695 | en_HK |
dc.identifier.authority | Beling, CD=rp00660 | en_HK |
dc.description.nature | published_or_final_version | en_HK |
dc.identifier.doi | 10.1063/1.357968 | en_HK |
dc.identifier.scopus | eid_2-s2.0-0343561790 | en_HK |
dc.identifier.hkuros | 3334 | - |
dc.identifier.volume | 76 | en_HK |
dc.identifier.issue | 11 | en_HK |
dc.identifier.spage | 7423 | en_HK |
dc.identifier.epage | 7427 | en_HK |
dc.identifier.isi | WOS:A1994PU81800037 | - |
dc.publisher.place | United States | en_HK |
dc.identifier.scopusauthorid | Liu, YC=7410214740 | en_HK |
dc.identifier.scopusauthorid | Chen, TP=36442234400 | en_HK |
dc.identifier.scopusauthorid | Fung, S=7201970040 | en_HK |
dc.identifier.scopusauthorid | Beling, CD=7005864180 | en_HK |
dc.identifier.issnl | 0021-8979 | - |