File Download
Supplementary
-
Citations:
- Appears in Collections:
postgraduate thesis: Acceptor defects in P-type gallium antimonide materials
| Title | Acceptor defects in P-type gallium antimonide materials |
|---|---|
| Authors | |
| Issue Date | 2005 |
| Publisher | The University of Hong Kong (Pokfulam, Hong Kong) |
| Citation | Lui, M. P. [雷美琪]. (2005). Acceptor defects in P-type gallium antimonide materials. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3164836 |
| Degree | Doctor of Philosophy |
| Subject | Compound semiconductors - Defects. Compound semiconductors - Testing. Positron annihilation. Spectrometer. Photoluminescence. Hall effect. |
| Dept/Program | Physics |
| Persistent Identifier | http://hdl.handle.net/10722/40269 |
| HKU Library Item ID | b3164836 |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lui, Mei-ki, Pattie. | - |
| dc.contributor.author | 雷美琪. | - |
| dc.date.issued | 2005 | - |
| dc.identifier.citation | Lui, M. P. [雷美琪]. (2005). Acceptor defects in P-type gallium antimonide materials. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3164836 | - |
| dc.identifier.uri | http://hdl.handle.net/10722/40269 | - |
| dc.language | eng | - |
| dc.publisher | The University of Hong Kong (Pokfulam, Hong Kong) | - |
| dc.relation.ispartof | HKU Theses Online (HKUTO) | - |
| dc.rights | The author retains all proprietary rights, (such as patent rights) and the right to use in future works. | - |
| dc.rights | This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License. | - |
| dc.source.uri | http://hub.hku.hk/bib/B31648368 | - |
| dc.subject.lcsh | Compound semiconductors - Defects. | - |
| dc.subject.lcsh | Compound semiconductors - Testing. | - |
| dc.subject.lcsh | Positron annihilation. | - |
| dc.subject.lcsh | Spectrometer. | - |
| dc.subject.lcsh | Photoluminescence. | - |
| dc.subject.lcsh | Hall effect. | - |
| dc.title | Acceptor defects in P-type gallium antimonide materials | - |
| dc.type | PG_Thesis | - |
| dc.identifier.hkul | b3164836 | - |
| dc.description.thesisname | Doctor of Philosophy | - |
| dc.description.thesislevel | Doctoral | - |
| dc.description.thesisdiscipline | Physics | - |
| dc.description.nature | published_or_final_version | - |
| dc.description.nature | abstract | - |
| dc.identifier.doi | 10.5353/th_b3164836 | - |
| dc.date.hkucongregation | 2005 | - |
| dc.identifier.mmsid | 991013367989703414 | - |