Showing results 1 to 4 of 4
Title | Author(s) | Issue Date | |
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Direct observation of inversion domain boundaries of GaN on c-sapphire at sub-ångstrom resolution Journal:Advanced Materials | 2008 | ||
2008 | |||
The mechanism for polarity inversion of GaN via a thin AlN layer: Direct experimental evidence Journal:Applied Physics Letters | 2007 | ||
Three-dimensional geometry of nanometer-scale AIN pits: A new template for quantum dots? Journal:Advanced Materials | 2008 |