Showing results 1 to 2 of 2
Title | Author(s) | Issue Date | |
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Nanoscale physical analysis of localized breakdown events in HfO<inf>2</inf>/SiO<inf>X</inf> dielectric stacks: A correlation study of STM induced BD with C-AFM and TEM Proceeding/Conference:Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA | 2012 | ||
Self-rectifying and forming-free unipolar HfO<inf>x</inf> based-high performance RRAM built by fab-avaialbe materials Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM | 2011 |