Showing results 1 to 4 of 4
| Title | Author(s) | Issue Date | |
|---|---|---|---|
Fluorination of Al2O3 blocking layer for improving the performance of metal-oxide-nitride-oxide-silicon flash memory Journal:Physica Status Solidi Rapid Research Letters | 2013 | ||
Improved Performance of GeON as Charge Storage Layer in Flash Memory by Optimal Annealing Journal:Microelectronics Reliability | 2012 | ||
Nitrided GdTiO as charge-trapping layer for flash memory applications Proceeding/Conference:International Conference on Solid-State and Integrated Circuit Technology Proceedings | 2012 | ||
Zn-doped Zr oxynitride as charge-trapping layer for flash memory applications Proceeding/Conference:IEEE Conference on Electron Devices and Solid-State Circuits Proceedings | 2013 |