Showing results 1 to 4 of 4
| Title | Author(s) | Issue Date | |
|---|---|---|---|
Doping of GaN by Mg diffusion Proceeding/Conference:Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings | 2002 | ||
Effects of Ar+ back-surface gettering on the properties of flicker noise in n-channel nitrided MOSFETs Journal:Solid-State Electronics | 1996 | ||
Effects of low-energy back surface gettering on the properties of 1/f noise in n-channel nitrided MOSFETs Proceeding/Conference:IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE | 1997 | ||
Properties of Si-SiO2 interface traps due to low-energy Ar+ backsurface bombardment in n-channel nitrided MOSFETs Proceeding/Conference:I E E E Hong Kong Electron Devices Meeting Proceedings | 1996 |