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Title | Author(s) | Issue Date | |
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A study on the improved programming characteristics of flash memory with Si 3N 4/SiO 2 stacked tunneling dielectric Journal:Microelectronics Reliability | 2009 |
Title | Author(s) | Issue Date | |
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A study on the improved programming characteristics of flash memory with Si 3N 4/SiO 2 stacked tunneling dielectric Journal:Microelectronics Reliability | 2009 |