Browsing "Department of Electrical & Electronic Engineering" by Author chen, jx

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Showing results 1 to 9 of 9
TitleAuthor(s)Issue Date
 
1.7-μm dissipative soliton Tm-doped fiber laser
Journal:Photonics Research
Chen, JXLi, XYLi, TJZhan, ZYLiu, MLi, CLuo, APZhou, PWong, KKYXu, WCLuo, ZC
2021
 
Improved characteristics for MOHOS memory with oxygen-rich GdO as charge storage layer annealed by NH3
Journal:Applied Physics A: materials science & processing
Liu, LXu, JPChen, JXLai, PT
2014
 
Improved Charge-Trapping Properties of TiON/HfON Dual Charge Storage Layer by Tapered Band Structure
Journal:Applied Physics Letters
Liu, LXu, JChen, JXJi, FLai, PT
2012
 
Improved Memory Characteristics by NH3-Nitrided GdO as Charge Storage Layer for Nonvolatile Memory Applications
Journal:Applied Physics Letters
Liu, LXu, JJi, FChen, JXLai, PT
2012
 
Improved Memory Window of MONOS Memory Capacitor with GdON as Charge Storage Layer
Proceeding/Conference:I E E E Conference on Electron Devices and Solid-State Circuits Proceedings
Liu, LXu, JChen, JXJi, FHUANG, XLai, PT
2012
 
Improved performance by using TaON/SiO2 as dual tunnel layer in Charge-Trapping nonvolatile memory
Journal:Microelectronics Reliability
Chen, JXXu, JPLiu, LHuang, XDLai, PT
2014
 
Improvements of Performance and Reliability for Metal–Oxide–Nitride–Oxide–Silicon Flash Memory With NO- or N2O-Grown Oxynitride as Tunnel Layer
Journal:IEEE Transactions on Device and Materials Reliability
Chen, JXXu, JPLiu, LHUANG, XDLai, PTXu, HX
2014
 
Performance Improvements of Metal–Oxide–Nitride–Oxide–Silicon Nonvolatile Memory with ZrO2 Charge-Trapping Layer by Using Nitrogen Incorporation
Journal:Applied Physics Express
Chen, JXXu, JLiu, LLai, PT
2013
 
Ultrathin HfON/SiO2 dual tunneling layer for improving the electrical properties of metal-oxide–nitride-oxide-silicon memory
Journal:Thin Solid Films
Liu, LXu, JChen, JXJi, FHUANG, XLai, PT
2012
Showing results 1 to 9 of 9