Showing results 11 to 15 of 15
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Title | Author(s) | Issue Date | Views | |
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Improved Performance of Amorphous InGaZnO Thin-Film Transistor with Ta2O5 Gate Dielectric by using La Incorporation Journal:IEEE Transactions on Device and Materials Reliability | 2014 | |||
Improved performance of pentacene organic thin-film transistor by using fluorine-implanted HfLaO as gate dielectric Proceeding/Conference:IEEE Semiconductor Interface Specialists Conference, SISC 2014 | 2014 | 32 | ||
Improvement of Pentacene Organic Thin-Film Transistor by Using Fluorine Plasma-Treated or Ion-Implanted HfO2 as Gate Dielectric Proceeding/Conference:IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) | 2019 | 23 | ||
Pentacene organic thin-film transistor with HfYO gate dielectric made on adhesive vacuum tape Journal:Electronics Letters | 2015 | 46 | ||
Recent Developments of Flexible InGaZnO ThināFilm Transistors Journal:Physica Status Solidi A: Applications and Materials Science | 2021 | 8 |