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Article: Selective phase growth of van der Waals high-κ Sb2O3 films
| Title | Selective phase growth of van der Waals high-<i>κ</i> Sb2O3 films |
|---|---|
| Authors | |
| Issue Date | 7-Nov-2025 |
| Publisher | Royal Society of Chemistry |
| Citation | Journal of Materials Chemistry C Materials for optical and electronic devices, 2025, v. 13, n. 41, p. 20931-20940 How to Cite? |
| Abstract | van der Waals (vdW) dielectric films are characterized by their dangling-bond free interface and thus show promise for use as the gate in the next-generation field effect transistor devices. The molecular crystal Sb2O3 has been proved to be an effective high-κ vdW dielectric with low-cost and CMOS compatibility. However, fabricating wafer-scale Sb2O3 films with a controllable dielectric constant and crystal phase is challenging. Based on the results of a first-principles study, we designed an oxygen-assisted low temperature pulsed laser deposition (PLD) method for the phase-selective growth of α- and β-Sb2O3 thin films with super-high κ (>100) and good homogeneity. The phase control is experimentally demonstrated by tuning the oxygen gas pressure during the growth process. Dielectric analysis of pure phase α-Sb2O3 shows excellent dielectric properties and reveals the physics of the transport mechanism and dielectric relaxation process. |
| Persistent Identifier | http://hdl.handle.net/10722/368442 |
| ISSN | 2023 Impact Factor: 5.7 2023 SCImago Journal Rankings: 1.358 |
| ISI Accession Number ID |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Yu, Jing | - |
| dc.contributor.author | Ong, Ruey Jinq | - |
| dc.contributor.author | Han, Wei | - |
| dc.contributor.author | Rehman, Atta Ur | - |
| dc.contributor.author | Zhou, Jiuren | - |
| dc.contributor.author | Han, Genquan | - |
| dc.contributor.author | Shi, Jing-Wen | - |
| dc.contributor.author | Tang, Chris | - |
| dc.contributor.author | Liu, Kailang | - |
| dc.contributor.author | Li, Wendi | - |
| dc.contributor.author | Wang, Hao | - |
| dc.contributor.author | Ling, Chi-Chung Francis | - |
| dc.date.accessioned | 2026-01-08T00:35:15Z | - |
| dc.date.available | 2026-01-08T00:35:15Z | - |
| dc.date.issued | 2025-11-07 | - |
| dc.identifier.citation | Journal of Materials Chemistry C Materials for optical and electronic devices, 2025, v. 13, n. 41, p. 20931-20940 | - |
| dc.identifier.issn | 2050-7526 | - |
| dc.identifier.uri | http://hdl.handle.net/10722/368442 | - |
| dc.description.abstract | <p>van der Waals (vdW) dielectric films are characterized by their dangling-bond free interface and thus show promise for use as the gate in the next-generation field effect transistor devices. The molecular crystal Sb<small><sub>2</sub></small>O<small><sub>3</sub></small> has been proved to be an effective high-<em>κ</em> vdW dielectric with low-cost and CMOS compatibility. However, fabricating wafer-scale Sb<small><sub>2</sub></small>O<small><sub>3</sub></small> films with a controllable dielectric constant and crystal phase is challenging. Based on the results of a first-principles study, we designed an oxygen-assisted low temperature pulsed laser deposition (PLD) method for the phase-selective growth of α- and β-Sb<small><sub>2</sub></small>O<small><sub>3</sub></small> thin films with super-high <em>κ</em> (>100) and good homogeneity. The phase control is experimentally demonstrated by tuning the oxygen gas pressure during the growth process. Dielectric analysis of pure phase α-Sb<small><sub>2</sub></small>O<small><sub>3</sub></small> shows excellent dielectric properties and reveals the physics of the transport mechanism and dielectric relaxation process.<br></p> | - |
| dc.language | eng | - |
| dc.publisher | Royal Society of Chemistry | - |
| dc.relation.ispartof | Journal of Materials Chemistry C Materials for optical and electronic devices | - |
| dc.title | Selective phase growth of van der Waals high-<i>κ</i> Sb2O3 films | - |
| dc.type | Article | - |
| dc.identifier.doi | 10.1039/d5tc02358k | - |
| dc.identifier.scopus | eid_2-s2.0-105018720226 | - |
| dc.identifier.volume | 13 | - |
| dc.identifier.issue | 41 | - |
| dc.identifier.spage | 20931 | - |
| dc.identifier.epage | 20940 | - |
| dc.identifier.eissn | 2050-7534 | - |
| dc.identifier.isi | WOS:001571166700001 | - |
| dc.identifier.issnl | 2050-7526 | - |