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Article: An Optoelectronic Artificial Synapse Based on CuIn0.7Ga0.3Se2/ Al-doped ZnO p-n Heterojunction for Bioinspired Neuromorphic Computing

TitleAn Optoelectronic Artificial Synapse Based on CuIn0.7Ga0.3Se2/ Al-doped ZnO p-n Heterojunction for Bioinspired Neuromorphic Computing
Authors
Keywordsartificial synapse
CIGS/AZO p-n heterojunction
memristors
neuromorphic computing
Issue Date9-Oct-2025
PublisherWiley
Citation
Small, 2025, v. 21, n. 40, p. 1-12 How to Cite?
AbstractThe traditional von Neumann architecture continues to limit the development of artificial intelligence. Memristors have become one of the most promising devices for breaking through the traditional von Neumann architecture. In this work, an optoelectronic synapse based on the CuIn0.7Ga0.3Se2 (CIGS)/ Al-doped ZnO (AZO) p-n heterojunction is prepared by radio-frequency (RF) magnetron sputtering. And the Au/CIGS/AZO/ITO p-n heterojunction artificial synapse has been utilized to simulate various synaptic behaviors as well as the learning-forgetting-relearning process of the human brain. Furthermore, employing a convolutional neural network (CNN) architecture with an enhanced stochastic gradient descent algorithm, the recognition accuracy for the MNIST and Fashion-MNIST datasets is achieved at 97.36% and 83%, respectively, demonstrating the potential application of Au/CIGS/AZO/ITO p-n heterojunction artificial synapse in neuromorphic computing and providing a feasible method for the development of high-performance optoelectronic devices based on CIGS/AZO p-n heterojunctions.
Persistent Identifierhttp://hdl.handle.net/10722/365927
ISSN
2023 Impact Factor: 13.0
2023 SCImago Journal Rankings: 3.348

 

DC FieldValueLanguage
dc.contributor.authorYang, S.-
dc.contributor.authorTang, Z.-
dc.contributor.authorJiang, X.-
dc.contributor.authorWen, C.-
dc.contributor.authorJiang, Y.P.-
dc.contributor.authorTang, X.G.-
dc.contributor.authorZhou, Y.C.-
dc.contributor.authorXing, X.-
dc.contributor.authorGao, J.-
dc.date.accessioned2025-11-12T00:36:35Z-
dc.date.available2025-11-12T00:36:35Z-
dc.date.issued2025-10-09-
dc.identifier.citationSmall, 2025, v. 21, n. 40, p. 1-12-
dc.identifier.issn1613-6810-
dc.identifier.urihttp://hdl.handle.net/10722/365927-
dc.description.abstractThe traditional von Neumann architecture continues to limit the development of artificial intelligence. Memristors have become one of the most promising devices for breaking through the traditional von Neumann architecture. In this work, an optoelectronic synapse based on the CuIn0.7Ga0.3Se2 (CIGS)/ Al-doped ZnO (AZO) p-n heterojunction is prepared by radio-frequency (RF) magnetron sputtering. And the Au/CIGS/AZO/ITO p-n heterojunction artificial synapse has been utilized to simulate various synaptic behaviors as well as the learning-forgetting-relearning process of the human brain. Furthermore, employing a convolutional neural network (CNN) architecture with an enhanced stochastic gradient descent algorithm, the recognition accuracy for the MNIST and Fashion-MNIST datasets is achieved at 97.36% and 83%, respectively, demonstrating the potential application of Au/CIGS/AZO/ITO p-n heterojunction artificial synapse in neuromorphic computing and providing a feasible method for the development of high-performance optoelectronic devices based on CIGS/AZO p-n heterojunctions.-
dc.languageeng-
dc.publisherWiley-
dc.relation.ispartofSmall-
dc.subjectartificial synapse-
dc.subjectCIGS/AZO p-n heterojunction-
dc.subjectmemristors-
dc.subjectneuromorphic computing-
dc.titleAn Optoelectronic Artificial Synapse Based on CuIn0.7Ga0.3Se2/ Al-doped ZnO p-n Heterojunction for Bioinspired Neuromorphic Computing-
dc.typeArticle-
dc.identifier.doi10.1002/smll.202507129-
dc.identifier.scopuseid_2-s2.0-105013648380-
dc.identifier.volume21-
dc.identifier.issue40-
dc.identifier.spage1-
dc.identifier.epage12-
dc.identifier.eissn1613-6829-
dc.identifier.issnl1613-6810-

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