File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Synthesis of semiconductor nanowires by annealing

TitleSynthesis of semiconductor nanowires by annealing
Authors
Zhi, C. Y.Bai, X. D.Wang, E. G.
Issue Date2004
Citation
Applied Physics Letters, 2004, v. 85, n. 10, p. 1802-1804 How to Cite?
DOI: http://dx.doi.org/10.1063/1.1786374
AbstractThe synthesis of semiconductor nanowires such as InAs, InP, InP, β-Ga2O3, and GaP by annealing semiconductor wafers covered with Au film at 550° - 650°C in a N2 atmosphere was analyzed. The composition of the obtained semiconductor nanowires was determined by substrate and chemical conditions of growth. High degrees of crystallization of the as-grown nanowires was revealed by high-resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED). The results show that by using doped semiconductor wafers as substrates as the annealing atmosphere, some predicted doping semiconductor nanowires can be synthesized.
Persistent Identifierhttp://hdl.handle.net/10722/360383
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976

 

DC FieldValueLanguage
dc.contributor.authorZhi, C. Y.-
dc.contributor.authorBai, X. D.-
dc.contributor.authorWang, E. G.-
dc.date.accessioned2025-09-10T09:06:33Z-
dc.date.available2025-09-10T09:06:33Z-
dc.date.issued2004-
dc.identifier.citationApplied Physics Letters, 2004, v. 85, n. 10, p. 1802-1804-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/360383-
dc.description.abstractThe synthesis of semiconductor nanowires such as InAs, InP, InP, β-Ga<inf>2</inf>O<inf>3</inf>, and GaP by annealing semiconductor wafers covered with Au film at 550° - 650°C in a N<inf>2</inf> atmosphere was analyzed. The composition of the obtained semiconductor nanowires was determined by substrate and chemical conditions of growth. High degrees of crystallization of the as-grown nanowires was revealed by high-resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED). The results show that by using doped semiconductor wafers as substrates as the annealing atmosphere, some predicted doping semiconductor nanowires can be synthesized.-
dc.languageeng-
dc.relation.ispartofApplied Physics Letters-
dc.titleSynthesis of semiconductor nanowires by annealing-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1063/1.1786374-
dc.identifier.scopuseid_2-s2.0-4944233077-
dc.identifier.volume85-
dc.identifier.issue10-
dc.identifier.spage1802-
dc.identifier.epage1804-

Export via OAI-PMH Interface in XML Formats

OR

Export to Other Non-XML Formats