Bulk synthesis, growth mechanism and properties of highly pure ultrafine boron nitride nanotubes with diameters of sub-10nm

Abstract

As a structural analogue of the carbon nanotube (CNT), the boron nitride nanotube (BNNT) has become one of the most intriguing non-carbon nanostructures. However, up to now the pre-existing restrictions/limitations of BNNT syntheses have made the progress in their research rather modest. This work presents a new route toward the synthesis of highly pure ultrafine BNNTs based on a modified boron oxide (BO) CVD method. A new effective precursor - a mixture of Li <inf>2</inf>O and B - has been proposed for the growth of thin, few-layer BNNTs in bulk amounts. The Li<inf>2</inf>O utilized as the precursor plays the crucial role for the present nanotube growth. The prepared BNNTs have average external diameters of sub-10nm and lengths of up to tens of νm. Electron energy loss spectrometry and Raman spectroscopy demonstrate the ultimate phase purity of the ultrafine BNNTs. Property studies indicate that the ultrafine nanotubes are perfect electrical insulators exhibiting superb resistance to oxidation and strong UV emission. Moreover, their reduced diameters lead to a dramatically decreased population of defects within the tube walls and result in the observation of near-band-edge (NBE) emission at room temperature. © 2011 IOP Publishing Ltd.