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Conference Paper: Field emission characteristics of oriented-AlN thin film on tungsten tip
| Title | Field emission characteristics of oriented-AlN thin film on tungsten tip |
|---|---|
| Authors | |
| Keywords | Aluminum nitride Field emission Orientation |
| Issue Date | 2005 |
| Citation | Applied Surface Science, 2005, v. 251, n. 1-4, p. 215-219 How to Cite? |
| Abstract | (0 0 2) Oriented-aluminum nitride (AlN) films with different thicknesses were deposited on tungsten (W) tips by using radio frequency magnetron reactive sputtering system. Compared studies of field emission (FE) characteristics were performed between the bare and AlN coated W tips. The results showed that enhanced electron emission could be obtained from oriented-AlN film on W tip. The hysteresis behaviors shown in Current-electric field (I-E) curves during downward electric field sweeps were observed, and the extent of hysteresis in I-E curves strongly depended on the thickness of the AlN film. The stability measurement of FE current presented that the hysteresis could be attributed to the charging in AlN film as an insulator. © 2005 Elsevier B.V. All rights reserved. |
| Persistent Identifier | http://hdl.handle.net/10722/359824 |
| ISSN | 2023 Impact Factor: 6.3 2023 SCImago Journal Rankings: 1.210 |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Yue, S. L. | - |
| dc.contributor.author | Gu, C. Z. | - |
| dc.contributor.author | Shi, C. Y. | - |
| dc.contributor.author | Zhi, C. Y. | - |
| dc.date.accessioned | 2025-09-10T09:03:33Z | - |
| dc.date.available | 2025-09-10T09:03:33Z | - |
| dc.date.issued | 2005 | - |
| dc.identifier.citation | Applied Surface Science, 2005, v. 251, n. 1-4, p. 215-219 | - |
| dc.identifier.issn | 0169-4332 | - |
| dc.identifier.uri | http://hdl.handle.net/10722/359824 | - |
| dc.description.abstract | (0 0 2) Oriented-aluminum nitride (AlN) films with different thicknesses were deposited on tungsten (W) tips by using radio frequency magnetron reactive sputtering system. Compared studies of field emission (FE) characteristics were performed between the bare and AlN coated W tips. The results showed that enhanced electron emission could be obtained from oriented-AlN film on W tip. The hysteresis behaviors shown in Current-electric field (I-E) curves during downward electric field sweeps were observed, and the extent of hysteresis in I-E curves strongly depended on the thickness of the AlN film. The stability measurement of FE current presented that the hysteresis could be attributed to the charging in AlN film as an insulator. © 2005 Elsevier B.V. All rights reserved. | - |
| dc.language | eng | - |
| dc.relation.ispartof | Applied Surface Science | - |
| dc.subject | Aluminum nitride | - |
| dc.subject | Field emission | - |
| dc.subject | Orientation | - |
| dc.title | Field emission characteristics of oriented-AlN thin film on tungsten tip | - |
| dc.type | Conference_Paper | - |
| dc.description.nature | link_to_subscribed_fulltext | - |
| dc.identifier.doi | 10.1016/j.apsusc.2005.03.105 | - |
| dc.identifier.scopus | eid_2-s2.0-27544481809 | - |
| dc.identifier.volume | 251 | - |
| dc.identifier.issue | 1-4 | - |
| dc.identifier.spage | 215 | - |
| dc.identifier.epage | 219 | - |