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Article: Synthesis and field-electron-emission behavior of aligned GaAs nanowires

TitleSynthesis and field-electron-emission behavior of aligned GaAs nanowires
Authors
Zhi, C. Y.Bai, X. D.Wang, E. G.
Issue Date2005
Citation
Applied Physics Letters, 2005, v. 86, n. 21, p. 1-3 How to Cite?
DOI: http://dx.doi.org/10.1063/1.1938248
AbstractLarge-area highly aligned GaAs nanowires were synthesized directly by etching GaAs wafer covered with Au film using H plasma. The characterizations by scanning electron microscopy and transmission electron microscopy reveal that the as-grown nanowires are uniform in distribution and the individual nanowires are well crystallized. The field-electron-emission behavior of the GaAs nanowire was studied and a low turn-on field of 2.0 Vμm was achieved, which suggests its potential application as cold electron sources. The mechanism for field-emission enhancement is also discussed. © 2005 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/359820
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976

 

DC FieldValueLanguage
dc.contributor.authorZhi, C. Y.-
dc.contributor.authorBai, X. D.-
dc.contributor.authorWang, E. G.-
dc.date.accessioned2025-09-10T09:03:31Z-
dc.date.available2025-09-10T09:03:31Z-
dc.date.issued2005-
dc.identifier.citationApplied Physics Letters, 2005, v. 86, n. 21, p. 1-3-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/359820-
dc.description.abstractLarge-area highly aligned GaAs nanowires were synthesized directly by etching GaAs wafer covered with Au film using H plasma. The characterizations by scanning electron microscopy and transmission electron microscopy reveal that the as-grown nanowires are uniform in distribution and the individual nanowires are well crystallized. The field-electron-emission behavior of the GaAs nanowire was studied and a low turn-on field of 2.0 Vμm was achieved, which suggests its potential application as cold electron sources. The mechanism for field-emission enhancement is also discussed. © 2005 American Institute of Physics.-
dc.languageeng-
dc.relation.ispartofApplied Physics Letters-
dc.titleSynthesis and field-electron-emission behavior of aligned GaAs nanowires-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1063/1.1938248-
dc.identifier.scopuseid_2-s2.0-20844459290-
dc.identifier.volume86-
dc.identifier.issue21-
dc.identifier.spage1-
dc.identifier.epage3-

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