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Conference Paper: Field emission characteristics of oriented AlN thin film on tungsten tip
| Title | Field emission characteristics of oriented AlN thin film on tungsten tip |
|---|---|
| Authors | |
| Issue Date | 2004 |
| Citation | Ivesc2004 5th International Vacuum Electron Sources Conference Proceedings, 2004, p. 81-83 How to Cite? |
| Abstract | By using radio frequency magnetron reactive sputtering system, oriented AlN films with different thickness were deposited on tungsten tips. Compared studies of field emission characteristics were performed between the bare and A1N coated W tips. The results showed that enhanced electron emission can be obtained from oriented A1N film on W tip. The hysteresis behaviors shown in Current-Electric field (I-E) curves during downward electric field sweeps were observed and the extent of hysteresis in I-E curves strongly depended on the thickness of the A1N films. The stability measurement of field emission current presented that the hysteresis can be attributed to the charging in A1N film as an insulator. © 2004 IEEE. |
| Persistent Identifier | http://hdl.handle.net/10722/359818 |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Yue, Shuanglin | - |
| dc.contributor.author | Gu, Changzhi | - |
| dc.contributor.author | Shi, Chengying | - |
| dc.contributor.author | Zhi, Chunyi | - |
| dc.date.accessioned | 2025-09-10T09:03:31Z | - |
| dc.date.available | 2025-09-10T09:03:31Z | - |
| dc.date.issued | 2004 | - |
| dc.identifier.citation | Ivesc2004 5th International Vacuum Electron Sources Conference Proceedings, 2004, p. 81-83 | - |
| dc.identifier.uri | http://hdl.handle.net/10722/359818 | - |
| dc.description.abstract | By using radio frequency magnetron reactive sputtering system, oriented AlN films with different thickness were deposited on tungsten tips. Compared studies of field emission characteristics were performed between the bare and A1N coated W tips. The results showed that enhanced electron emission can be obtained from oriented A1N film on W tip. The hysteresis behaviors shown in Current-Electric field (I-E) curves during downward electric field sweeps were observed and the extent of hysteresis in I-E curves strongly depended on the thickness of the A1N films. The stability measurement of field emission current presented that the hysteresis can be attributed to the charging in A1N film as an insulator. © 2004 IEEE. | - |
| dc.language | eng | - |
| dc.relation.ispartof | Ivesc2004 5th International Vacuum Electron Sources Conference Proceedings | - |
| dc.title | Field emission characteristics of oriented AlN thin film on tungsten tip | - |
| dc.type | Conference_Paper | - |
| dc.description.nature | link_to_subscribed_fulltext | - |
| dc.identifier.scopus | eid_2-s2.0-20444382100 | - |
| dc.identifier.spage | 81 | - |
| dc.identifier.epage | 83 | - |