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Article: High-density uniformly aligned silicon nanotip arrays and their enhanced field emission characteristics
| Title | High-density uniformly aligned silicon nanotip arrays and their enhanced field emission characteristics |
|---|---|
| Authors | |
| Keywords | A. Semiconductor D. Electronic transport |
| Issue Date | 2003 |
| Citation | Solid State Communications, 2003, v. 125, n. 3-4, p. 185-188 How to Cite? |
| Abstract | High-density (∼ 108/cm2), uniformly aligned silicon nanotip arrays are synthesized by a plasma-assisted hot-filament chemical vapor deposition process using mixed gases composed of hydrogen, nitrogen and methane. The silicon nanotips grow along 〈112〉, and are coated in situ with a ∼ 3 nm thick amorphous carbon film by increasing the methane concentration in the source gases. In comparison to the uncoated silicon nanotips arrays, the coated tips have enhanced field emission properties with a turn-on field of 1.6 V/μm (for 10 μA/cm2) and threshold field of 3 V/μm (for 10 mA/cm2), suggesting their potential applications for flat panel displays. © 2003 Elsevier Science Ltd. All rights reserved. |
| Persistent Identifier | http://hdl.handle.net/10722/359766 |
| ISSN | 2023 Impact Factor: 2.1 2023 SCImago Journal Rankings: 0.414 |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Bai, X. D. | - |
| dc.contributor.author | Zhi, C. Y. | - |
| dc.contributor.author | Liu, S. | - |
| dc.contributor.author | Wang, E. G. | - |
| dc.contributor.author | Wang, Z. L. | - |
| dc.date.accessioned | 2025-09-10T09:03:10Z | - |
| dc.date.available | 2025-09-10T09:03:10Z | - |
| dc.date.issued | 2003 | - |
| dc.identifier.citation | Solid State Communications, 2003, v. 125, n. 3-4, p. 185-188 | - |
| dc.identifier.issn | 0038-1098 | - |
| dc.identifier.uri | http://hdl.handle.net/10722/359766 | - |
| dc.description.abstract | High-density (∼ 10<sup>8</sup>/cm<sup>2</sup>), uniformly aligned silicon nanotip arrays are synthesized by a plasma-assisted hot-filament chemical vapor deposition process using mixed gases composed of hydrogen, nitrogen and methane. The silicon nanotips grow along 〈112〉, and are coated in situ with a ∼ 3 nm thick amorphous carbon film by increasing the methane concentration in the source gases. In comparison to the uncoated silicon nanotips arrays, the coated tips have enhanced field emission properties with a turn-on field of 1.6 V/μm (for 10 μA/cm<sup>2</sup>) and threshold field of 3 V/μm (for 10 mA/cm<sup>2</sup>), suggesting their potential applications for flat panel displays. © 2003 Elsevier Science Ltd. All rights reserved. | - |
| dc.language | eng | - |
| dc.relation.ispartof | Solid State Communications | - |
| dc.subject | A. Semiconductor | - |
| dc.subject | D. Electronic transport | - |
| dc.title | High-density uniformly aligned silicon nanotip arrays and their enhanced field emission characteristics | - |
| dc.type | Article | - |
| dc.description.nature | link_to_subscribed_fulltext | - |
| dc.identifier.doi | 10.1016/S0038-1098(02)00720-2 | - |
| dc.identifier.scopus | eid_2-s2.0-0037220620 | - |
| dc.identifier.volume | 125 | - |
| dc.identifier.issue | 3-4 | - |
| dc.identifier.spage | 185 | - |
| dc.identifier.epage | 188 | - |