Electric Output Analysis of Sliding Mode Metal-Semiconductor Based DC-TENG

Abstract

<p>Recently, the direct current triboelectric nanogenerator (DC-TENG), especially metal-semiconductor based DC-TENG, has gained prevalence as a source of portable energy supply due to a no requirement of rectification in device applications. In this work, the detailed output performance of DC-TENG, constructed using n-type silicon (n-Si) and copper (Cu) as opposite triboelectric layers, was studied by varying the working parameters of the device, such as, sliding velocity, sliding distance, physical load strength, and contact area size. It was found that the output current increases steadily as the sliding velocity increased. In the sliding distance-dependent measurements, the current and voltage remained relatively constant, while the charge increased about two times as the sliding distance increased about four times. It was also observed that the amount of transferred charge increased as the strength of applied load, and the contact area size increased because a higher physical load and a larger-sized sample facilitates the good overlapping of the two surfaces by improving the effective contact area and frictional forces during the sliding motion. The time constant in discharging process was independent from the sliding layer(n-Si) size due to the reverse proportionality of the size effect in resistances and capacitances.</p>