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Article: 3D Ising Superconductivity in As-Grown Sn Intercalated TaSe2 Crystal

Title3D Ising Superconductivity in As-Grown Sn Intercalated TaSe2 Crystal
Authors
Keywords3D Ising superconductivity
bilayer intercalation
noncentrosymmetry
SnTaSe2
Issue Date17-Mar-2025
PublisherAmerican Chemical Society
Citation
Nano Letters, 2025, v. 25, n. 12, p. 4895-4903 How to Cite?
Abstract
2D Ising superconductivity emerges in noncentrosymmetric 2D materials, differing from conventional 2D/3D superconductivity. Here, we report the synthesis of a new polymorph of intercalated layered materials, where two layers of Sn are intercalated in between every two layers of TaSe2 (2Sn-2TaSe2), in contrast to the commonly observed single-layer intercalation. Remarkably, the as-grown 2Sn-2TaSe2 single crystals possess a high quality of crystallinity and showcase 3D Ising superconductivity. Transport measurements and theoretical calculations show that the 2Sn-2TaSe2 having C3v point group symmetry induces formation of Ising pairs, which intriguingly exhibits, on one hand, an in-plane upper critical field surpassing the Pauli limit by a factor of 2.6 like a 2D Ising superconductor but, on the other hand, a temperature- and field-dependent conductivity characteristic of conventional 3D superconductivity. Our findings demonstrate the persistent 2D Ising pairing in 3D, paving the way for exploring dimensional physical behaviors by intercalating layered materials.


Persistent Identifierhttp://hdl.handle.net/10722/355728
ISSN
2023 Impact Factor: 9.6
2023 SCImago Journal Rankings: 3.411
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorZheng, Bo-
dc.contributor.authorZhang, Xiaoming-
dc.contributor.authorWang, Kaipu-
dc.contributor.authorLi, Ruimin-
dc.contributor.authorCao, Jin-
dc.contributor.authorWang, Changlong-
dc.contributor.authorTan, Haige-
dc.contributor.authorLi, Zhidong-
dc.contributor.authorLin, Benchuan-
dc.contributor.authorLi, Peng-
dc.contributor.authorXi, Chuanying-
dc.contributor.authorZhang, Jingmin-
dc.contributor.authorLu, Yalin-
dc.contributor.authorZhu, Wenguang-
dc.contributor.authorLiu, Zhongkai-
dc.contributor.authorYang, Shengyuan A.-
dc.contributor.authorLi, Lain-Jong-
dc.contributor.authorLiu, Feng-
dc.contributor.authorXiang, Bin-
dc.date.accessioned2025-05-06T00:35:06Z-
dc.date.available2025-05-06T00:35:06Z-
dc.date.issued2025-03-17-
dc.identifier.citationNano Letters, 2025, v. 25, n. 12, p. 4895-4903-
dc.identifier.issn1530-6984-
dc.identifier.urihttp://hdl.handle.net/10722/355728-
dc.description.abstract<div>2D Ising superconductivity emerges in noncentrosymmetric 2D materials, differing from conventional 2D/3D superconductivity. Here, we report the synthesis of a new polymorph of intercalated layered materials, where two layers of Sn are intercalated in between every two layers of TaSe2 (2Sn-2TaSe2), in contrast to the commonly observed single-layer intercalation. Remarkably, the as-grown 2Sn-2TaSe2 single crystals possess a high quality of crystallinity and showcase 3D Ising superconductivity. Transport measurements and theoretical calculations show that the 2Sn-2TaSe2 having C3v point group symmetry induces formation of Ising pairs, which intriguingly exhibits, on one hand, an in-plane upper critical field surpassing the Pauli limit by a factor of 2.6 like a 2D Ising superconductor but, on the other hand, a temperature- and field-dependent conductivity characteristic of conventional 3D superconductivity. Our findings demonstrate the persistent 2D Ising pairing in 3D, paving the way for exploring dimensional physical behaviors by intercalating layered materials.</div><div><br></div>-
dc.languageeng-
dc.publisherAmerican Chemical Society-
dc.relation.ispartofNano Letters-
dc.subject3D Ising superconductivity-
dc.subjectbilayer intercalation-
dc.subjectnoncentrosymmetry-
dc.subjectSnTaSe2-
dc.title3D Ising Superconductivity in As-Grown Sn Intercalated TaSe2 Crystal-
dc.typeArticle-
dc.identifier.doi10.1021/acs.nanolett.5c00196-
dc.identifier.scopuseid_2-s2.0-105001876667-
dc.identifier.volume25-
dc.identifier.issue12-
dc.identifier.spage4895-
dc.identifier.epage4903-
dc.identifier.eissn1530-6992-
dc.identifier.isiWOS:001447019800001-
dc.identifier.issnl1530-6984-

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