Physical vapor transport growth of layered (3-In2Se3 nanoflakes: Investigation of morphological, Raman and photo detection characteristics

Abstract

<p>In₂Se₃ nanostructures have received extensive attention due to their potential uses in phase change random access memory, field effect transistors, thermoelectric and optoelectronic devices. Few studies reported the direct growth of layered-In₂Se₃ on SiO₂/Si substrate, and the reported flake size is less than 10 μm. In the present study, we have successfully grown large area β-In₂Se₃ layered flakes on mica and SiO₂(300)/Si substrates by physical vapor transport (PVT) process. Morphology, structure, composition, thickness and phase characterizations have been carried out by using an optical microscope, scanning electron microscopy (SEM), EDX, atomic force microscopy (AFM) and Raman spectroscopy, respectively. The first order temperature coefficients of a strong Raman mode on mica and SiO₂(300)/Si, respectively are calculated by employing temperature and power dependent Raman spectroscopy. A PVT grown β-In₂Se₃ based broadband optical detector showing a significant optical response from 405 nm to 830 nm was fabricated.</p>