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postgraduate thesis: Some defect studies on the compound semiconductors GaAs, InP and SiC using positron annihilation spectroscopy
| Title | Some defect studies on the compound semiconductors GaAs, InP and SiC using positron annihilation spectroscopy |
|---|---|
| Authors | |
| Advisors | |
| Issue Date | 2000 |
| Publisher | The University of Hong Kong (Pokfulam, Hong Kong) |
| Citation | Deng, A. [鄧愛紅]. (2000). Some defect studies on the compound semiconductors GaAs, InP and SiC using positron annihilation spectroscopy. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3124012 |
| Degree | Doctor of Philosophy |
| Subject | Semiconductors - Spectra. Positron annihilation. |
| Dept/Program | Physics |
| Persistent Identifier | http://hdl.handle.net/10722/35465 |
| HKU Library Item ID | b3124012 |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | Fung, SHY | - |
| dc.contributor.advisor | Beling, CD | - |
| dc.contributor.author | Deng, Aihong. | - |
| dc.contributor.author | 鄧愛紅. | - |
| dc.date.issued | 2000 | - |
| dc.identifier.citation | Deng, A. [鄧愛紅]. (2000). Some defect studies on the compound semiconductors GaAs, InP and SiC using positron annihilation spectroscopy. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3124012 | - |
| dc.identifier.uri | http://hdl.handle.net/10722/35465 | - |
| dc.language | eng | - |
| dc.publisher | The University of Hong Kong (Pokfulam, Hong Kong) | - |
| dc.relation.ispartof | HKU Theses Online (HKUTO) | - |
| dc.rights | The author retains all proprietary rights, (such as patent rights) and the right to use in future works. | - |
| dc.rights | This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License. | - |
| dc.source.uri | http://hub.hku.hk/bib/B31240124 | - |
| dc.subject.lcsh | Semiconductors - Spectra. | - |
| dc.subject.lcsh | Positron annihilation. | - |
| dc.title | Some defect studies on the compound semiconductors GaAs, InP and SiC using positron annihilation spectroscopy | - |
| dc.type | PG_Thesis | - |
| dc.identifier.hkul | b3124012 | - |
| dc.description.thesisname | Doctor of Philosophy | - |
| dc.description.thesislevel | Doctoral | - |
| dc.description.thesisdiscipline | Physics | - |
| dc.description.nature | published_or_final_version | - |
| dc.identifier.doi | 10.5353/th_b3124012 | - |
| dc.date.hkucongregation | 2000 | - |
| dc.identifier.mmsid | 991012424969703414 | - |