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Article: Electrical detection of mobile skyrmions with 100% tunneling magnetoresistance in a racetrack-like device

TitleElectrical detection of mobile skyrmions with 100% tunneling magnetoresistance in a racetrack-like device
Authors
Issue Date14-Jun-2024
PublisherNature Research
Citation
npj Quantum Materials, 2024, v. 9, n. 1 How to Cite?
Abstract

Magnetic skyrmions are topological spin textures that are regarded as promising information carriers for next-generation spintronic memory and computing devices. For practical applications, their deterministic generation, manipulation, and efficient detection are the most critical aspects. Although the generation and manipulation of skyrmions have been extensively studied, efficient electrical detection of mobile skyrmions by using techniques that are compatible with modern magnetic memory technology, remains to be adequately addressed. Here, through integrating magnetic multilayers that host nanoscale skyrmions, together with the magnetic tunnel junctions (MTJ), we demonstrate the electrical detection of skyrmions by using the tunneling magnetoresistance (TMR) effect with a TMR ratio that reaches over 100% at room temperature. By building prototype three-terminal racetrack-like devices, we further show the electrical detection of mobile skyrmions by recording the time-dependent TMR ratios. Along with many recent developments, our results could advance the development of skyrmionic memory and logic devices. 


Persistent Identifierhttp://hdl.handle.net/10722/353864
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorZhao, Mengqi-
dc.contributor.authorChen, Aitian-
dc.contributor.authorHuang, Pei Yuan-
dc.contributor.authorLiu, Chen-
dc.contributor.authorShen, Laichuan-
dc.contributor.authorLiu, Jiahao-
dc.contributor.authorZhao, Le-
dc.contributor.authorFang, Bin-
dc.contributor.authorYue, Wen Cheng-
dc.contributor.authorZheng, Dongxing-
dc.contributor.authorWang, Ledong-
dc.contributor.authorBai, Hao-
dc.contributor.authorShen, Ka-
dc.contributor.authorZhou, Yan-
dc.contributor.authorWang, Shasha-
dc.contributor.authorLiu, Enlong-
dc.contributor.authorHe, Shikun-
dc.contributor.authorWang, Yong Lei-
dc.contributor.authorZhang, Xixiang-
dc.contributor.authorJiang, Wanjun-
dc.date.accessioned2025-01-28T00:35:29Z-
dc.date.available2025-01-28T00:35:29Z-
dc.date.issued2024-06-14-
dc.identifier.citationnpj Quantum Materials, 2024, v. 9, n. 1-
dc.identifier.urihttp://hdl.handle.net/10722/353864-
dc.description.abstract<p>Magnetic skyrmions are topological spin textures that are regarded as promising information carriers for next-generation spintronic memory and computing devices. For practical applications, their deterministic generation, manipulation, and efficient detection are the most critical aspects. Although the generation and manipulation of skyrmions have been extensively studied, efficient electrical detection of mobile skyrmions by using techniques that are compatible with modern magnetic memory technology, remains to be adequately addressed. Here, through integrating magnetic multilayers that host nanoscale skyrmions, together with the magnetic tunnel junctions (MTJ), we demonstrate the electrical detection of skyrmions by using the tunneling magnetoresistance (TMR) effect with a TMR ratio that reaches over 100% at room temperature. By building prototype three-terminal racetrack-like devices, we further show the electrical detection of mobile skyrmions by recording the time-dependent TMR ratios. Along with many recent developments, our results could advance the development of skyrmionic memory and logic devices. <br></p>-
dc.languageeng-
dc.publisherNature Research-
dc.relation.ispartofnpj Quantum Materials-
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.titleElectrical detection of mobile skyrmions with 100% tunneling magnetoresistance in a racetrack-like device -
dc.typeArticle-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1038/s41535-024-00655-1-
dc.identifier.scopuseid_2-s2.0-85195980018-
dc.identifier.volume9-
dc.identifier.issue1-
dc.identifier.eissn2397-4648-
dc.identifier.isiWOS:001248051200001-
dc.identifier.issnl2397-4648-

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