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- Publisher Website: 10.1021/acsaem.3c01830
- Scopus: eid_2-s2.0-85175077191
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Article: Thermoelectric Optimization of n-Type AgBiSe2 via Se Vacancy Control and Transition-Metal Doping
Title | Thermoelectric Optimization of n-Type AgBiSe2 via Se Vacancy Control and Transition-Metal Doping |
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Authors | |
Keywords | AgBiSe2 carrier concentration metal doping thermoelectric vacancy control |
Issue Date | 14-Sep-2023 |
Publisher | American Chemical Society |
Citation | ACS Applied Energy Materials, 2023, v. 6, n. 18, p. 9709-9715 How to Cite? |
Abstract | Silver bismuth selenide (AgBiSe2) has garnered attention as a Pb-free material with a high thermoelectric efficiency owing to its intrinsically low thermal conductivity. Although pristine AgBiSe2 is an n-type material, in this study, a weak p-type intrinsic property is achieved in AgBiSe2 owing to the high sensitivity of its carrier type and concentration to Se vacancies. Herein, we report the enhancement of the thermoelectric performance of AgBiSe2 by introducing Se vacancies and aliovalent transition-metal doping at the Ag site. Se vacancies are first introduced to switch the conductivity of AgBiSe2 to the n-type and considerably increase the carrier concentration. Further, aliovalent transition-metal dopants are incorporated to tune the carrier concentration and thus increase the electrical conductivity of AgBiSe2. The electrical mobility and effective mass are also increased, which improves the electrical properties and enhances the power factor. The Ag0.97Cd0.03BiSe1.995 sample exhibited the highest dimensionless figure of merit (zTmax) of ∼0.65 at 773 K and an average dimensionless zTavg of ∼0.39 between 323 and 773 K. |
Persistent Identifier | http://hdl.handle.net/10722/345899 |
ISSN | 2023 Impact Factor: 5.4 2023 SCImago Journal Rankings: 1.467 |
DC Field | Value | Language |
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dc.contributor.author | Wang, W | - |
dc.contributor.author | Shen, D | - |
dc.contributor.author | Li, H | - |
dc.contributor.author | Chen, C | - |
dc.contributor.author | Chen, Y | - |
dc.date.accessioned | 2024-09-04T07:06:20Z | - |
dc.date.available | 2024-09-04T07:06:20Z | - |
dc.date.issued | 2023-09-14 | - |
dc.identifier.citation | ACS Applied Energy Materials, 2023, v. 6, n. 18, p. 9709-9715 | - |
dc.identifier.issn | 2574-0962 | - |
dc.identifier.uri | http://hdl.handle.net/10722/345899 | - |
dc.description.abstract | <p>Silver bismuth selenide (AgBiSe2) has garnered attention as a Pb-free material with a high thermoelectric efficiency owing to its intrinsically low thermal conductivity. Although pristine AgBiSe2 is an n-type material, in this study, a weak p-type intrinsic property is achieved in AgBiSe2 owing to the high sensitivity of its carrier type and concentration to Se vacancies. Herein, we report the enhancement of the thermoelectric performance of AgBiSe2 by introducing Se vacancies and aliovalent transition-metal doping at the Ag site. Se vacancies are first introduced to switch the conductivity of AgBiSe2 to the n-type and considerably increase the carrier concentration. Further, aliovalent transition-metal dopants are incorporated to tune the carrier concentration and thus increase the electrical conductivity of AgBiSe2. The electrical mobility and effective mass are also increased, which improves the electrical properties and enhances the power factor. The Ag0.97Cd0.03BiSe1.995 sample exhibited the highest dimensionless figure of merit (zTmax) of ∼0.65 at 773 K and an average dimensionless zTavg of ∼0.39 between 323 and 773 K.<br></p> | - |
dc.language | eng | - |
dc.publisher | American Chemical Society | - |
dc.relation.ispartof | ACS Applied Energy Materials | - |
dc.subject | AgBiSe2 | - |
dc.subject | carrier concentration | - |
dc.subject | metal doping | - |
dc.subject | thermoelectric | - |
dc.subject | vacancy control | - |
dc.title | Thermoelectric Optimization of n-Type AgBiSe2 via Se Vacancy Control and Transition-Metal Doping | - |
dc.type | Article | - |
dc.identifier.doi | 10.1021/acsaem.3c01830 | - |
dc.identifier.scopus | eid_2-s2.0-85175077191 | - |
dc.identifier.volume | 6 | - |
dc.identifier.issue | 18 | - |
dc.identifier.spage | 9709 | - |
dc.identifier.epage | 9715 | - |
dc.identifier.eissn | 2574-0962 | - |
dc.identifier.issnl | 2574-0962 | - |