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Article: Functionally separated electronic band engineering via multi-element doping plus high-density defects advances board-temperature-range thermoelectric performance in GeTe

TitleFunctionally separated electronic band engineering via multi-element doping plus high-density defects advances board-temperature-range thermoelectric performance in GeTe
Authors
Zhu, JTan, XPan, DLuo, YLi, RRao, XCheng, RXia, CChen, YSun, QAng, R
KeywordsBand convergence
GeTe
Resonant level
Thermoelectric
Issue Date16-Dec-2023
PublisherElsevier
Citation
Chemical Engineering Journal, 2023, v. 480 How to Cite?
DOI: http://dx.doi.org/10.1016/j.cej.2023.148135
Abstract

GeTe has attracted widespread attention as an ideal mid-temperature thermoelectric (TE) material, but its peak performance within a narrow mid-temperature range limits the conversion efficiency improvement of future TE devices. Here, to achieve the overall enhancement of GeTe over a broad temperature range, especially near room temperature, we demonstrate the functionally separated electronic band engineering strategy (resonance energy levels and band convergence) coupling the construction of high-density defects by designing multi-element SnSe-In-Sb co-doping. Fundamentally, to distinguish the functions of selected elements, it was found that SnSe alloying mainly promotes the band convergence of GeTe in elevated temperatures, In doping can create the resonance energy level for enhancing the TE performance near room temperature, and Sb can optimize symmetry and the overall carrier concentration, thereby jointly improving the effective mass and Seebeck coefficient. Moreover, the construction of various phonon scattering centers including high-density Ge micro/nano-precipitates, van der Waals gaps, dislocations, and strong stress fields, strongly inhibits phonon transport. Benefiting from these synergistic effects, a peak ZT of ∼ 2.0 at 653 K, ZTave of ∼ 1.2 in the range from 303 to 803 K, and Vickers microhardness of ∼ 234 Hv are obtained in (Ge0.91In0.01Sb0.08Te)0.98(SnSe)0.02 sample. This study demonstrates a promising strategy to optimize thermoelectric performance by selectively co-doping functionally separated elements for developing high-performance TE materials.


Persistent Identifierhttp://hdl.handle.net/10722/345889
ISSN
1385-8947
2023 Impact Factor: 13.3
2023 SCImago Journal Rankings: 2.852

 

DC FieldValueLanguage
dc.contributor.authorZhu, J-
dc.contributor.authorTan, X-
dc.contributor.authorPan, D-
dc.contributor.authorLuo, Y-
dc.contributor.authorLi, R-
dc.contributor.authorRao, X-
dc.contributor.authorCheng, R-
dc.contributor.authorXia, C-
dc.contributor.authorChen, Y-
dc.contributor.authorSun, Q-
dc.contributor.authorAng, R-
dc.date.accessioned2024-09-04T07:06:17Z-
dc.date.available2024-09-04T07:06:17Z-
dc.date.issued2023-12-16-
dc.identifier.citationChemical Engineering Journal, 2023, v. 480-
dc.identifier.issn1385-8947-
dc.identifier.urihttp://hdl.handle.net/10722/345889-
dc.description.abstract<p>GeTe has attracted widespread attention as an ideal mid-temperature <a href="https://www.sciencedirect.com/topics/materials-science/thermoelectrics" title="Learn more about thermoelectric from ScienceDirect's AI-generated Topic Pages">thermoelectric</a> (TE) material, but its peak performance within a narrow mid-temperature range limits the conversion efficiency improvement of future TE devices. Here, to achieve the overall enhancement of GeTe over a broad temperature range, especially near room temperature, we demonstrate the functionally separated electronic band engineering strategy (resonance energy levels and band convergence) coupling the construction of high-density defects by designing multi-element SnSe-In-Sb co-doping. Fundamentally, to distinguish the functions of selected elements, it was found that SnSe alloying mainly promotes the band convergence of GeTe in elevated temperatures, In doping can create the resonance energy level for enhancing the TE performance near room temperature, and Sb can optimize symmetry and the overall carrier concentration, thereby jointly improving the effective mass and Seebeck coefficient. Moreover, the construction of various <a href="https://www.sciencedirect.com/topics/physics-and-astronomy/phonon" title="Learn more about phonon from ScienceDirect's AI-generated Topic Pages">phonon</a> scattering centers including high-density Ge micro/nano-precipitates, van der Waals gaps, dislocations, and strong stress fields, strongly inhibits <a href="https://www.sciencedirect.com/topics/physics-and-astronomy/phonon" title="Learn more about phonon from ScienceDirect's AI-generated Topic Pages">phonon</a> transport. Benefiting from these synergistic effects, a peak <em>ZT</em> of ∼ 2.0 at 653 K, <em>ZT</em><sub>ave</sub> of ∼ 1.2 in the range from 303 to 803 K, and Vickers microhardness of ∼ 234 <em>H</em><sub>v</sub> are obtained in (Ge<sub>0.91</sub>In<sub>0.01</sub>Sb<sub>0.08</sub>Te)<sub>0.98</sub>(SnSe)<sub>0.02</sub> sample. This study demonstrates a promising strategy to optimize thermoelectric performance by selectively co-doping functionally separated elements for developing high-performance TE materials.<br></p>-
dc.languageeng-
dc.publisherElsevier-
dc.relation.ispartofChemical Engineering Journal-
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.subjectBand convergence-
dc.subjectGeTe-
dc.subjectResonant level-
dc.subjectThermoelectric-
dc.titleFunctionally separated electronic band engineering via multi-element doping plus high-density defects advances board-temperature-range thermoelectric performance in GeTe-
dc.typeArticle-
dc.identifier.doi10.1016/j.cej.2023.148135-
dc.identifier.scopuseid_2-s2.0-85180809564-
dc.identifier.volume480-
dc.identifier.eissn1873-3212-
dc.identifier.issnl1385-8947-

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