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Article: Observation of Electric Hysteresis, Polarization Oscillation, and Pyroelectricity in Nonferroelectric p-n Heterojunctions

TitleObservation of Electric Hysteresis, Polarization Oscillation, and Pyroelectricity in Nonferroelectric p-n Heterojunctions
Authors
Issue Date9-May-2023
PublisherAmerican Physical Society
Citation
Physical Review Letters, 2023, v. 130, n. 19 How to Cite?
AbstractThe switchable electric polarization is usually achieved in ferroelectric materials with noncentrosymmetric structures, which opens exciting opportunities for information storage and neuromorphic computing. In another polar system of p-n junction, there exists the electric polarization at the interface due to the Fermi level misalignment. However, the resultant built-in electric field is unavailable to manipulate, thus attracting less attention for memory devices. Here, we report the interfacial polarization hysteresis (IPH) in the vertical sidewall van der Waals heterojunctions of black phosphorus and quasi-two-dimensional electron gas on SrTiO3. A nonvolatile switching of electric polarization can be achieved by reconstructing the space charge region (SCR) with long-lifetime nonequilibrium carriers. The resulting electric-field controllable IPH is experimentally verified by electric hysteresis, polarization oscillation, and pyroelectric effect. Further studies confirm the transition temperature of 340 K, beyond which the IPH vanishes. The second transition is revealed with the temperature dropping below 230 K, corresponding to the sharp improvement of IPH and the freezing of SCR reconstruction. This work offers new possibilities for exploring the memory phenomena in nonferroelectric p-n heterojunctions.
Persistent Identifierhttp://hdl.handle.net/10722/345760
ISSN
2023 Impact Factor: 8.1
2023 SCImago Journal Rankings: 3.040

 

DC FieldValueLanguage
dc.contributor.authorJiang, Yucheng-
dc.contributor.authorMa, Xinglong-
dc.contributor.authorWang, Lin-
dc.contributor.authorZhang, Jinlei-
dc.contributor.authorWang, Zhichao-
dc.contributor.authorZhao, Run-
dc.contributor.authorLiu, Guozhen-
dc.contributor.authorLi, Yang-
dc.contributor.authorZhang, Cheng-
dc.contributor.authorMa, Chunlan-
dc.contributor.authorQi, Yaping-
dc.contributor.authorWu, Lin-
dc.contributor.authorGao, Ju-
dc.date.accessioned2024-08-28T07:40:31Z-
dc.date.available2024-08-28T07:40:31Z-
dc.date.issued2023-05-09-
dc.identifier.citationPhysical Review Letters, 2023, v. 130, n. 19-
dc.identifier.issn0031-9007-
dc.identifier.urihttp://hdl.handle.net/10722/345760-
dc.description.abstractThe switchable electric polarization is usually achieved in ferroelectric materials with noncentrosymmetric structures, which opens exciting opportunities for information storage and neuromorphic computing. In another polar system of p-n junction, there exists the electric polarization at the interface due to the Fermi level misalignment. However, the resultant built-in electric field is unavailable to manipulate, thus attracting less attention for memory devices. Here, we report the interfacial polarization hysteresis (IPH) in the vertical sidewall van der Waals heterojunctions of black phosphorus and quasi-two-dimensional electron gas on SrTiO3. A nonvolatile switching of electric polarization can be achieved by reconstructing the space charge region (SCR) with long-lifetime nonequilibrium carriers. The resulting electric-field controllable IPH is experimentally verified by electric hysteresis, polarization oscillation, and pyroelectric effect. Further studies confirm the transition temperature of 340 K, beyond which the IPH vanishes. The second transition is revealed with the temperature dropping below 230 K, corresponding to the sharp improvement of IPH and the freezing of SCR reconstruction. This work offers new possibilities for exploring the memory phenomena in nonferroelectric p-n heterojunctions.-
dc.languageeng-
dc.publisherAmerican Physical Society-
dc.relation.ispartofPhysical Review Letters-
dc.titleObservation of Electric Hysteresis, Polarization Oscillation, and Pyroelectricity in Nonferroelectric p-n Heterojunctions-
dc.typeArticle-
dc.identifier.doi10.1103/PhysRevLett.130.196801-
dc.identifier.pmid37243636-
dc.identifier.scopuseid_2-s2.0-85159764307-
dc.identifier.volume130-
dc.identifier.issue19-
dc.identifier.eissn1079-7114-
dc.identifier.issnl0031-9007-

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