File Download
There are no files associated with this item.
Links for fulltext
(May Require Subscription)
- Publisher Website: 10.1103/PhysRevB.109.235403
- Scopus: eid_2-s2.0-85195789907
- WOS: WOS:001241993700001
- Find via
Supplementary
- Citations:
- Appears in Collections:
Article: Electric field controlled valley-polarized photocurrent switch based on the circular bulk photovoltaic effect
Title | Electric field controlled valley-polarized photocurrent switch based on the circular bulk photovoltaic effect |
---|---|
Authors | |
Issue Date | 5-Jun-2024 |
Publisher | American Physical Society |
Citation | Physical Review B, 2024, v. 109, n. 23 How to Cite? |
Abstract | Efficient electric manipulation of valley degrees of freedom is critical and challenging for the advancement of valley-based information science and technology. We put forth an electrical scheme, based on a two-band Dirac model, that can switch the fully valley-polarized photocurrent between 𝐾 and 𝐾′ valleys using the circular bulk electro-photovoltaic effect. This is accomplished by applying an out-of-plane electric field to the two-dimensional valley materials, which enables continuous tuning of the Berry curvature and its sign flip. We found that the switch of the fully valley-polarized photocurrent is directly tied to the sign change of Berry curvature, which accompanies a topological phase transition, for instance, the quantum spin Hall effect and the quantum valley Hall effect. This scheme has been confirmed in monolayer BiAsI2 and germanene through first-principles calculations. Our paper offers a promising strategy for the development of a volatile valley-addressable memory device and could inspire further research in this area. |
Persistent Identifier | http://hdl.handle.net/10722/344768 |
ISSN | 2023 Impact Factor: 3.2 2023 SCImago Journal Rankings: 1.345 |
ISI Accession Number ID |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yang, Yaqing | - |
dc.contributor.author | Cheng, Xiaoyu | - |
dc.contributor.author | Xiao, Liantuan | - |
dc.contributor.author | Jia, Suotang | - |
dc.contributor.author | Chen, Jun | - |
dc.contributor.author | Zhang, Lei | - |
dc.contributor.author | Wang, Jian | - |
dc.date.accessioned | 2024-08-12T04:07:18Z | - |
dc.date.available | 2024-08-12T04:07:18Z | - |
dc.date.issued | 2024-06-05 | - |
dc.identifier.citation | Physical Review B, 2024, v. 109, n. 23 | - |
dc.identifier.issn | 2469-9950 | - |
dc.identifier.uri | http://hdl.handle.net/10722/344768 | - |
dc.description.abstract | <p>Efficient electric manipulation of valley degrees of freedom is critical and challenging for the advancement of valley-based information science and technology. We put forth an electrical scheme, based on a two-band Dirac model, that can switch the fully valley-polarized photocurrent between 𝐾 and 𝐾′ valleys using the circular bulk electro-photovoltaic effect. This is accomplished by applying an out-of-plane electric field to the two-dimensional valley materials, which enables continuous tuning of the Berry curvature and its sign flip. We found that the switch of the fully valley-polarized photocurrent is directly tied to the sign change of Berry curvature, which accompanies a topological phase transition, for instance, the quantum spin Hall effect and the quantum valley Hall effect. This scheme has been confirmed in monolayer BiAsI2 and germanene through first-principles calculations. Our paper offers a promising strategy for the development of a volatile valley-addressable memory device and could inspire further research in this area.<br></p> | - |
dc.language | eng | - |
dc.publisher | American Physical Society | - |
dc.relation.ispartof | Physical Review B | - |
dc.title | Electric field controlled valley-polarized photocurrent switch based on the circular bulk photovoltaic effect | - |
dc.type | Article | - |
dc.identifier.doi | 10.1103/PhysRevB.109.235403 | - |
dc.identifier.scopus | eid_2-s2.0-85195789907 | - |
dc.identifier.volume | 109 | - |
dc.identifier.issue | 23 | - |
dc.identifier.eissn | 2469-9969 | - |
dc.identifier.isi | WOS:001241993700001 | - |
dc.identifier.issnl | 2469-9950 | - |