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postgraduate thesis: A study of thermally nitrided silicon dioxide thin films for metal-oxide-silicon VLSI techology
| Title | A study of thermally nitrided silicon dioxide thin films for metal-oxide-silicon VLSI techology |
|---|---|
| Authors | |
| Issue Date | 1990 |
| Publisher | The University of Hong Kong (Pokfulam, Hong Kong) |
| Citation | Liu, Z. [劉志宏]. (1990). A study of thermally nitrided silicon dioxide thin films for metal-oxide-silicon VLSI techology. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3123189 |
| Degree | Doctor of Philosophy |
| Subject | Silicon oxide films. Integrated circuits - Very large scale integration. Metal oxide semiconductor field-effect transistors. |
| Dept/Program | Electrical and Electronic Engineering |
| Persistent Identifier | http://hdl.handle.net/10722/34405 |
| HKU Library Item ID | b3123189 |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Liu, Zhihong. | - |
| dc.contributor.author | 劉志宏 | - |
| dc.date.issued | 1990 | - |
| dc.identifier.citation | Liu, Z. [劉志宏]. (1990). A study of thermally nitrided silicon dioxide thin films for metal-oxide-silicon VLSI techology. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3123189 | - |
| dc.identifier.uri | http://hdl.handle.net/10722/34405 | - |
| dc.language | eng | - |
| dc.publisher | The University of Hong Kong (Pokfulam, Hong Kong) | - |
| dc.relation.ispartof | HKU Theses Online (HKUTO) | - |
| dc.rights | The author retains all proprietary rights, (such as patent rights) and the right to use in future works. | - |
| dc.rights | This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License. | - |
| dc.source.uri | http://hub.hku.hk/bib/B31231895 | - |
| dc.subject.lcsh | Silicon oxide films. | - |
| dc.subject.lcsh | Integrated circuits - Very large scale integration. | - |
| dc.subject.lcsh | Metal oxide semiconductor field-effect transistors. | - |
| dc.title | A study of thermally nitrided silicon dioxide thin films for metal-oxide-silicon VLSI techology | - |
| dc.type | PG_Thesis | - |
| dc.identifier.hkul | b3123189 | - |
| dc.description.thesisname | Doctor of Philosophy | - |
| dc.description.thesislevel | Doctoral | - |
| dc.description.thesisdiscipline | Electrical and Electronic Engineering | - |
| dc.description.nature | published_or_final_version | - |
| dc.identifier.doi | 10.5353/th_b3123189 | - |
| dc.date.hkucongregation | 1990 | - |
| dc.identifier.mmsid | 991012351779703414 | - |