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Article: Optical Characterization of InGaN Quantum Structures at the Nanoscale
Title | Optical Characterization of InGaN Quantum Structures at the Nanoscale |
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Authors | |
Keywords | CL InGaN quantum well SNOM |
Issue Date | 1-Jun-2024 |
Publisher | Wiley |
Citation | Advanced Quantum Technologies, 2024, v. 7, n. 6 How to Cite? |
Abstract | This review paper presents an overview of the optical characterization techniques for Indium Gallium Nitride (InGaN) quantum well (QW) structures at a nanoscale. The two major techniques are reviewed—Electron Microscopy-Cathodoluminescence (EM-CL) and Scanning Near-field Optical Microscopy (SNOM). It elucidates the critical role these methodologies play in revealing the complex properties of InGaN QWs, including their structural characteristics, optical properties, carrier dynamics, and the effects of defects and doping. The review highlights key findings from a variety of studies, demonstrating how EM-CL and SNOM have contributed to the understanding of these micro-/nano- structures and their potential applications in high-efficiency optoelectronic devices. |
Persistent Identifier | http://hdl.handle.net/10722/344040 |
ISSN | 2023 Impact Factor: 4.4 2023 SCImago Journal Rankings: 1.609 |
DC Field | Value | Language |
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dc.contributor.author | Fu, Wai Yuen | - |
dc.contributor.author | Choi, Hoi Wai | - |
dc.date.accessioned | 2024-06-27T01:06:55Z | - |
dc.date.available | 2024-06-27T01:06:55Z | - |
dc.date.issued | 2024-06-01 | - |
dc.identifier.citation | Advanced Quantum Technologies, 2024, v. 7, n. 6 | - |
dc.identifier.issn | 2511-9044 | - |
dc.identifier.uri | http://hdl.handle.net/10722/344040 | - |
dc.description.abstract | <p>This review paper presents an overview of the optical characterization techniques for Indium Gallium Nitride (InGaN) quantum well (QW) structures at a nanoscale. The two major techniques are reviewed—Electron Microscopy-Cathodoluminescence (EM-CL) and Scanning Near-field Optical Microscopy (SNOM). It elucidates the critical role these methodologies play in revealing the complex properties of InGaN QWs, including their structural characteristics, optical properties, carrier dynamics, and the effects of defects and doping. The review highlights key findings from a variety of studies, demonstrating how EM-CL and SNOM have contributed to the understanding of these micro-/nano- structures and their potential applications in high-efficiency optoelectronic devices.<br></p> | - |
dc.language | eng | - |
dc.publisher | Wiley | - |
dc.relation.ispartof | Advanced Quantum Technologies | - |
dc.rights | This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License. | - |
dc.subject | CL | - |
dc.subject | InGaN | - |
dc.subject | quantum well | - |
dc.subject | SNOM | - |
dc.title | Optical Characterization of InGaN Quantum Structures at the Nanoscale | - |
dc.type | Article | - |
dc.description.nature | published_or_final_version | - |
dc.identifier.doi | 10.1002/qute.202300335 | - |
dc.identifier.scopus | eid_2-s2.0-85187940806 | - |
dc.identifier.volume | 7 | - |
dc.identifier.issue | 6 | - |
dc.identifier.eissn | 2511-9044 | - |
dc.identifier.issnl | 2511-9044 | - |