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Article: High-member low-dimensional Sn-based perovskite solar cells

TitleHigh-member low-dimensional Sn-based perovskite solar cells
Authors
Keywordslead-free perovskite solar cells
low-dimensional structure
optoelectronics device
Sn-based perovskite
Issue Date9-Jan-2023
PublisherSpringer
Citation
Science China Chemistry, 2023, v. 66, n. 2, p. 459-465 How to Cite?
AbstractSn-based perovskites are promising thin-film photovoltaic materials for their ideal bandgap and the eco-friendliness of Sn, but the performance of Sn-based perovskite solar cells is hindered by the short carrier diffusion length and large defect density in nominally-synthesized Sn-based perovskite films. Herein we demonstrate that a long carrier diffusion length is achievable in quasi-2D Sn-based perovskite films consisting of high-member low-dimensional Ruddlesden-Popper (RP) phases with a preferred crystal orientation distribution. The key to the film synthesis is the use of a molecular additive formed by phenylethy-lammonium cations and optimally mixed halide-pseudohalide anions, which favorably tailors the quasi-2D Sn-based perovskite crystallization kinetics. The high-member RP film structure effectively enhances device short-circuit current density, giving rise to an increased power conversion efficiency (PCE) of 14.6%. The resulting device demonstrates a near-unity shelf stability upon 1,000 h in nitrogen. A high reproductivity is also achieved with a count of 50 devices showing PCEs within a narrow range from minimum 13.0% to maximum 14.6%.
Persistent Identifierhttp://hdl.handle.net/10722/343862
ISSN
2023 Impact Factor: 10.4
2023 SCImago Journal Rankings: 2.316
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLi, HS-
dc.contributor.authorZang, ZH-
dc.contributor.authorWei, Q-
dc.contributor.authorJiang, XY-
dc.contributor.authorMa, MY-
dc.contributor.authorXing, ZS-
dc.contributor.authorWang, JT-
dc.contributor.authorYu, DN-
dc.contributor.authorWang, F-
dc.contributor.authorZhou, WJ-
dc.contributor.authorWong, KS-
dc.contributor.authorChow, PCY-
dc.contributor.authorZhou, YY-
dc.contributor.authorNing, ZJ-
dc.date.accessioned2024-06-13T08:14:48Z-
dc.date.available2024-06-13T08:14:48Z-
dc.date.issued2023-01-09-
dc.identifier.citationScience China Chemistry, 2023, v. 66, n. 2, p. 459-465-
dc.identifier.issn1674-7291-
dc.identifier.urihttp://hdl.handle.net/10722/343862-
dc.description.abstractSn-based perovskites are promising thin-film photovoltaic materials for their ideal bandgap and the eco-friendliness of Sn, but the performance of Sn-based perovskite solar cells is hindered by the short carrier diffusion length and large defect density in nominally-synthesized Sn-based perovskite films. Herein we demonstrate that a long carrier diffusion length is achievable in quasi-2D Sn-based perovskite films consisting of high-member low-dimensional Ruddlesden-Popper (RP) phases with a preferred crystal orientation distribution. The key to the film synthesis is the use of a molecular additive formed by phenylethy-lammonium cations and optimally mixed halide-pseudohalide anions, which favorably tailors the quasi-2D Sn-based perovskite crystallization kinetics. The high-member RP film structure effectively enhances device short-circuit current density, giving rise to an increased power conversion efficiency (PCE) of 14.6%. The resulting device demonstrates a near-unity shelf stability upon 1,000 h in nitrogen. A high reproductivity is also achieved with a count of 50 devices showing PCEs within a narrow range from minimum 13.0% to maximum 14.6%.-
dc.languageeng-
dc.publisherSpringer-
dc.relation.ispartofScience China Chemistry-
dc.subjectlead-free perovskite solar cells-
dc.subjectlow-dimensional structure-
dc.subjectoptoelectronics device-
dc.subjectSn-based perovskite-
dc.titleHigh-member low-dimensional Sn-based perovskite solar cells-
dc.typeArticle-
dc.identifier.doi10.1007/s11426-022-1489-8-
dc.identifier.scopuseid_2-s2.0-85146568687-
dc.identifier.volume66-
dc.identifier.issue2-
dc.identifier.spage459-
dc.identifier.epage465-
dc.identifier.eissn1869-1870-
dc.identifier.isiWOS:000912298900002-
dc.publisher.placeBEIJING-
dc.identifier.issnl1869-1870-

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