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Article: Deep defect level engineering: A strategy of optimizing the carrier concentration for high thermoelectric performance

TitleDeep defect level engineering: A strategy of optimizing the carrier concentration for high thermoelectric performance
Authors
Issue Date2018
Citation
Energy and Environmental Science, 2018, v. 11, n. 4, p. 933-940 How to Cite?
AbstractThermoelectric properties are heavily dependent on the carrier concentration, and therefore the optimization of carrier concentration plays a central role in achieving high thermoelectric performance. The optimized carrier concentration is highly temperature-dependent and could even possibly vary within one order of magnitude in the temperature range of several hundreds of Kelvin. Practically, however, the traditional doping strategy will only lead to a constant carrier concentration, and thus the thermoelectric performance is only optimized within a limited temperature range. Here, we demonstrate that a temperature-dependent carrier concentration can be realized by simultaneously introducing shallow and deep defect levels. In this work, iodine (I) and indium (In) are co-doped in PbTe, where iodine acts as the shallow donor level that supplies sufficient electrons and indium builds up the localized half-filled deep defect state in the band gap. The indium deep defect state traps electrons at a lower temperature and the trapped electrons will be thermally activated back to the conduction band when the temperature rises. In this way, the carrier concentration can be engineered as temperature-dependent, which matches the theoretically predicted optimized carrier concentration over the whole temperature range. As a result, a room temperature ZT of ∼0.4 and a peak ZT of ∼1.4 at 773 K were obtained in the n-type In/I co-doped PbTe, leading to a record-high average ZT of ∼1.04 in the temperature range of 300 to 773 K. Importantly, since deep defect levels also exist in other materials, the strategy of deep defect level engineering should be widely applicable to a variety of materials for enhancing the thermoelectric performance across a broad temperature range.
Persistent Identifierhttp://hdl.handle.net/10722/343670
ISSN
2023 Impact Factor: 32.4
2023 SCImago Journal Rankings: 10.935

 

DC FieldValueLanguage
dc.contributor.authorZhang, Qian-
dc.contributor.authorSong, Qichen-
dc.contributor.authorWang, Xinyu-
dc.contributor.authorSun, Jingying-
dc.contributor.authorZhu, Qing-
dc.contributor.authorDahal, Keshab-
dc.contributor.authorLin, Xi-
dc.contributor.authorCao, Feng-
dc.contributor.authorZhou, Jiawei-
dc.contributor.authorChen, Shuo-
dc.contributor.authorChen, Gang-
dc.contributor.authorMao, Jun-
dc.contributor.authorRen, Zhifeng-
dc.date.accessioned2024-05-27T09:29:06Z-
dc.date.available2024-05-27T09:29:06Z-
dc.date.issued2018-
dc.identifier.citationEnergy and Environmental Science, 2018, v. 11, n. 4, p. 933-940-
dc.identifier.issn1754-5692-
dc.identifier.urihttp://hdl.handle.net/10722/343670-
dc.description.abstractThermoelectric properties are heavily dependent on the carrier concentration, and therefore the optimization of carrier concentration plays a central role in achieving high thermoelectric performance. The optimized carrier concentration is highly temperature-dependent and could even possibly vary within one order of magnitude in the temperature range of several hundreds of Kelvin. Practically, however, the traditional doping strategy will only lead to a constant carrier concentration, and thus the thermoelectric performance is only optimized within a limited temperature range. Here, we demonstrate that a temperature-dependent carrier concentration can be realized by simultaneously introducing shallow and deep defect levels. In this work, iodine (I) and indium (In) are co-doped in PbTe, where iodine acts as the shallow donor level that supplies sufficient electrons and indium builds up the localized half-filled deep defect state in the band gap. The indium deep defect state traps electrons at a lower temperature and the trapped electrons will be thermally activated back to the conduction band when the temperature rises. In this way, the carrier concentration can be engineered as temperature-dependent, which matches the theoretically predicted optimized carrier concentration over the whole temperature range. As a result, a room temperature ZT of ∼0.4 and a peak ZT of ∼1.4 at 773 K were obtained in the n-type In/I co-doped PbTe, leading to a record-high average ZT of ∼1.04 in the temperature range of 300 to 773 K. Importantly, since deep defect levels also exist in other materials, the strategy of deep defect level engineering should be widely applicable to a variety of materials for enhancing the thermoelectric performance across a broad temperature range.-
dc.languageeng-
dc.relation.ispartofEnergy and Environmental Science-
dc.titleDeep defect level engineering: A strategy of optimizing the carrier concentration for high thermoelectric performance-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1039/c8ee00112j-
dc.identifier.scopuseid_2-s2.0-85045954859-
dc.identifier.volume11-
dc.identifier.issue4-
dc.identifier.spage933-
dc.identifier.epage940-
dc.identifier.eissn1754-5706-

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