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Article: Tuning donor level of nitrogen-doped diamond by deep strain engineering-An ab initio study

TitleTuning donor level of nitrogen-doped diamond by deep strain engineering-An <i>ab initio</i> study
Authors
Issue Date7-Aug-2023
PublisherAmerican Institute of Physics
Citation
Applied Physics Letters, 2023, v. 123, n. 6 How to Cite?
Abstract

The development of diamond semiconductor devices has been hindered by the challenge of preparing n-type diamond with a shallow donor state. Recently, elastic strain engineering has emerged as a promising strategy for modulating the electrical properties of diamond. In this study, we used first-principles calculations to investigate the influence of large, uniaxial elastic strain on the electrical properties of nitrogen (N)-doped diamond, particularly the donor level. We found that both tensile and compressive strains can shift the donor level of N to a shallower state, but compressive strains of more than 9% along [100] appear more effective in making N a shallower donor in strained diamond. This study offers insights for future experimental design to combine strain engineering and doping toward practical diamond semiconductor devices.


Persistent Identifierhttp://hdl.handle.net/10722/339654
ISSN
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorYang, LM-
dc.contributor.authorFan, R-
dc.contributor.authorHu, ALC-
dc.contributor.authorMa, JZ-
dc.contributor.authorLiu, YX-
dc.contributor.authorLu, Y-
dc.date.accessioned2024-03-11T10:38:18Z-
dc.date.available2024-03-11T10:38:18Z-
dc.date.issued2023-08-07-
dc.identifier.citationApplied Physics Letters, 2023, v. 123, n. 6-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/339654-
dc.description.abstract<p>The development of diamond semiconductor devices has been hindered by the challenge of preparing n-type diamond with a shallow donor state. Recently, elastic strain engineering has emerged as a promising strategy for modulating the electrical properties of diamond. In this study, we used first-principles calculations to investigate the influence of large, uniaxial elastic strain on the electrical properties of nitrogen (N)-doped diamond, particularly the donor level. We found that both tensile and compressive strains can shift the donor level of N to a shallower state, but compressive strains of more than 9% along [100] appear more effective in making N a shallower donor in strained diamond. This study offers insights for future experimental design to combine strain engineering and doping toward practical diamond semiconductor devices.</p>-
dc.languageeng-
dc.publisherAmerican Institute of Physics-
dc.relation.ispartofApplied Physics Letters-
dc.titleTuning donor level of nitrogen-doped diamond by deep strain engineering-An <i>ab initio</i> study-
dc.typeArticle-
dc.identifier.doi10.1063/5.0159829-
dc.identifier.scopuseid_2-s2.0-85170650403-
dc.identifier.volume123-
dc.identifier.issue6-
dc.identifier.eissn1077-3118-
dc.identifier.isiWOS:001045989700001-
dc.publisher.placeMELVILLE-
dc.identifier.issnl0003-6951-

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