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Article: Multislip-enabled morphing of all-inorganic perovskites

TitleMultislip-enabled morphing of all-inorganic perovskites
Authors
Issue Date14-Aug-2023
PublisherNature Research
Citation
Nature Materials, 2023, v. 22, n. 10, p. 1175-1181 How to Cite?
Abstract

All-inorganic lead halide perovskites (CsPbX3, X = Cl, Br or I) are becoming increasingly important for energy conversion and optoelectronics because of their outstanding performance and enhanced environmental stability. Morphing perovskites into specific shapes and geometries without damaging their intrinsic functional properties is attractive for designing devices and manufacturing. However, inorganic semiconductors are often intrinsically brittle at room temperature, except for some recently reported layered or van der Waals semiconductors. Here, by in situ compression, we demonstrate that single-crystal CsPbX3 micropillars can be substantially morphed into distinct shapes (cubic, L and Z shapes, rectangular arches and so on) without localized cleavage or cracks. Such exceptional plasticity is enabled by successive slips of partial dislocations on multiple {110}.< 11 ($) over bar0 > systems, as evidenced by atomic-resolution transmission electron microscopy and first-principles and atomistic simulations. The optoelectronic performance and bandgap of the devices were unchanged. Thus, our results suggest that CsPbX3 perovskites, as potential deformable inorganic semiconductors, may have profound implications for the manufacture of advanced optoelectronics and energy systems.


Persistent Identifierhttp://hdl.handle.net/10722/339650
ISSN
2023 Impact Factor: 37.2
2023 SCImago Journal Rankings: 14.231
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLi, XC-
dc.contributor.authorMeng, Y-
dc.contributor.authorLi, WP-
dc.contributor.authorZhang, J-
dc.contributor.authorDang, CQ-
dc.contributor.authorWang, HY-
dc.contributor.authorHung, SW-
dc.contributor.authorFan, R-
dc.contributor.authorChen, FR-
dc.contributor.authorZhao, SJ-
dc.contributor.authorHo, JC-
dc.contributor.authorLu, Y-
dc.date.accessioned2024-03-11T10:38:16Z-
dc.date.available2024-03-11T10:38:16Z-
dc.date.issued2023-08-14-
dc.identifier.citationNature Materials, 2023, v. 22, n. 10, p. 1175-1181-
dc.identifier.issn1476-1122-
dc.identifier.urihttp://hdl.handle.net/10722/339650-
dc.description.abstract<p>All-inorganic lead halide perovskites (CsPbX3, X = Cl, Br or I) are becoming increasingly important for energy conversion and optoelectronics because of their outstanding performance and enhanced environmental stability. Morphing perovskites into specific shapes and geometries without damaging their intrinsic functional properties is attractive for designing devices and manufacturing. However, inorganic semiconductors are often intrinsically brittle at room temperature, except for some recently reported layered or van der Waals semiconductors. Here, by in situ compression, we demonstrate that single-crystal CsPbX3 micropillars can be substantially morphed into distinct shapes (cubic, L and Z shapes, rectangular arches and so on) without localized cleavage or cracks. Such exceptional plasticity is enabled by successive slips of partial dislocations on multiple {110}.< 11 ($) over bar0 > systems, as evidenced by atomic-resolution transmission electron microscopy and first-principles and atomistic simulations. The optoelectronic performance and bandgap of the devices were unchanged. Thus, our results suggest that CsPbX3 perovskites, as potential deformable inorganic semiconductors, may have profound implications for the manufacture of advanced optoelectronics and energy systems.</p>-
dc.languageeng-
dc.publisherNature Research-
dc.relation.ispartofNature Materials-
dc.titleMultislip-enabled morphing of all-inorganic perovskites-
dc.typeArticle-
dc.identifier.doi10.1038/s41563-023-01631-z-
dc.identifier.pmid37580366-
dc.identifier.scopuseid_2-s2.0-85168142992-
dc.identifier.volume22-
dc.identifier.issue10-
dc.identifier.spage1175-
dc.identifier.epage1181-
dc.identifier.eissn1476-4660-
dc.identifier.isiWOS:001048380900004-
dc.publisher.placeBERLIN-
dc.identifier.issnl1476-1122-

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