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Article: Molecular Engineering on Kinetics-Driven Self-Assembled Monolayers Working as Auxiliary Layers on Dielectrics in Organic Field-Effect Transistors

TitleMolecular Engineering on Kinetics-Driven Self-Assembled Monolayers Working as Auxiliary Layers on Dielectrics in Organic Field-Effect Transistors
Authors
Keywordshead engineering
organic field-effect transistor
packing model
self-assembled monolayers
spin-coating
Issue Date7-Dec-2023
PublisherWiley Open Access
Citation
Advanced Electronic Materials, 2023 How to Cite?
Abstract

Self-assembled monolayers (SAMs) are a class of quasi-2D materials adhesive to the substrate by chemisorption. Due to their transparency, diversity, stability, sensitivity, selectivity, and great potential in surface passivation, SAMs have been extensively investigated and applied in various functional devices, particularly in organic field effect transistors (OFETs). Among all the processing methods, kinetic-driven spin-coating is frequently used for the SAM preparation due to its high efficiency and low cost. However, the importance of SAM quality and its relationship to device performance has not been studied in detail, hindering the new SAM development and device optimization. In this study, SAMs prepared by kinetic-driven spin-coating are carefully investigated in terms of their surface morphology, density, and regularity, and proposed a correlation model between chemical structure and SAM quality. Additionally, the prepared SAMs are utilized as auxiliary layers on dielectrics and analyzed their effects on OFET properties. Through these investigations, a sequential relationship is established between chemical structure, SAM quality, and device performance, which can provide efficient feedback for system optimization.


Persistent Identifierhttp://hdl.handle.net/10722/339260
ISSN
2023 Impact Factor: 5.3
2023 SCImago Journal Rankings: 1.689
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLi, Mingliang-
dc.contributor.authorCao, Yingnan-
dc.contributor.authorXie, Kefeng-
dc.contributor.authorTang, Jinyao-
dc.date.accessioned2024-03-11T10:35:13Z-
dc.date.available2024-03-11T10:35:13Z-
dc.date.issued2023-12-07-
dc.identifier.citationAdvanced Electronic Materials, 2023-
dc.identifier.issn2199-160X-
dc.identifier.urihttp://hdl.handle.net/10722/339260-
dc.description.abstract<p>Self-assembled monolayers (SAMs) are a class of quasi-2D materials adhesive to the substrate by chemisorption. Due to their transparency, diversity, stability, sensitivity, selectivity, and great potential in surface passivation, SAMs have been extensively investigated and applied in various functional devices, particularly in organic field effect transistors (OFETs). Among all the processing methods, kinetic-driven spin-coating is frequently used for the SAM preparation due to its high efficiency and low cost. However, the importance of SAM quality and its relationship to device performance has not been studied in detail, hindering the new SAM development and device optimization. In this study, SAMs prepared by kinetic-driven spin-coating are carefully investigated in terms of their surface morphology, density, and regularity, and proposed a correlation model between chemical structure and SAM quality. Additionally, the prepared SAMs are utilized as auxiliary layers on dielectrics and analyzed their effects on OFET properties. Through these investigations, a sequential relationship is established between chemical structure, SAM quality, and device performance, which can provide efficient feedback for system optimization.</p>-
dc.languageeng-
dc.publisherWiley Open Access-
dc.relation.ispartofAdvanced Electronic Materials-
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.subjecthead engineering-
dc.subjectorganic field-effect transistor-
dc.subjectpacking model-
dc.subjectself-assembled monolayers-
dc.subjectspin-coating-
dc.titleMolecular Engineering on Kinetics-Driven Self-Assembled Monolayers Working as Auxiliary Layers on Dielectrics in Organic Field-Effect Transistors-
dc.typeArticle-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1002/aelm.202300712-
dc.identifier.scopuseid_2-s2.0-85178951120-
dc.identifier.eissn2199-160X-
dc.identifier.isiWOS:001114982100001-
dc.identifier.issnl2199-160X-

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