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Article: Heterogeneous integration of a GaN-based photonic integrated circuit with an Si-based transimpedance amplifier

TitleHeterogeneous integration of a GaN-based photonic integrated circuit with an Si-based transimpedance amplifier
Authors
Issue Date30-Mar-2023
PublisherOptica
Citation
Optics Letters, 2023, v. 48, n. 5, p. 1124-1127 How to Cite?
Abstract

The heterogeneous integration of a GaN-based photonic integrated circuit (PIC) and an Si-based transimpedance amplifier (TIA) is demonstrated in this work. The monolithic GaN PIC, fabricated from a GaN-on-Si light-emitting diode (LED) wafer, comprises LEDs whose optical outputs are coupled to photodetectors (PD) through suspended waveguides. The PIC chip is mounted onto a printed circuit board together with a TIA chip and two filter chip capacitors, occupying a compact footprint. The components are interconnected directly using wire-bonds to minimize signal delays and attenuation. The integrated system achieves rise and fall times of 2.21 and 2.10 ns, respectively, a transmission delay of 3.54 ns, and a bandwidth exceeding 390 MHz. Transmission of a pseudorandom binary sequence-3 (PRBS-3) signal across the integrated system is also demonstrated at the data transmission rate of 280 Mbit/s with a clearly resolved open eye diagram.


Persistent Identifierhttp://hdl.handle.net/10722/338649
ISSN
2023 Impact Factor: 3.1
2023 SCImago Journal Rankings: 1.040
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorMa, X-
dc.contributor.authorCheung, YF-
dc.contributor.authorLyu, H-
dc.contributor.authorChoi, HW-
dc.date.accessioned2024-03-11T10:30:27Z-
dc.date.available2024-03-11T10:30:27Z-
dc.date.issued2023-03-30-
dc.identifier.citationOptics Letters, 2023, v. 48, n. 5, p. 1124-1127-
dc.identifier.issn0146-9592-
dc.identifier.urihttp://hdl.handle.net/10722/338649-
dc.description.abstract<p>The heterogeneous integration of a GaN-based photonic integrated circuit (PIC) and an Si-based transimpedance amplifier (TIA) is demonstrated in this work. The monolithic GaN PIC, fabricated from a GaN-on-Si light-emitting diode (LED) wafer, comprises LEDs whose optical outputs are coupled to photodetectors (PD) through suspended waveguides. The PIC chip is mounted onto a printed circuit board together with a TIA chip and two filter chip capacitors, occupying a compact footprint. The components are interconnected directly using wire-bonds to minimize signal delays and attenuation. The integrated system achieves rise and fall times of 2.21 and 2.10 ns, respectively, a transmission delay of 3.54 ns, and a bandwidth exceeding 390 MHz. Transmission of a pseudorandom binary sequence-3 (PRBS-3) signal across the integrated system is also demonstrated at the data transmission rate of 280 Mbit/s with a clearly resolved open eye diagram.<br></p>-
dc.languageeng-
dc.publisherOptica-
dc.relation.ispartofOptics Letters-
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.titleHeterogeneous integration of a GaN-based photonic integrated circuit with an Si-based transimpedance amplifier-
dc.typeArticle-
dc.identifier.doi10.1364/OL.481935-
dc.identifier.scopuseid_2-s2.0-85149137092-
dc.identifier.volume48-
dc.identifier.issue5-
dc.identifier.spage1124-
dc.identifier.epage1127-
dc.identifier.eissn1539-4794-
dc.identifier.isiWOS:000948417200010-
dc.identifier.issnl0146-9592-

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