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Article: Electrostatic moiré potential from twisted hexagonal boron nitride layers

TitleElectrostatic moiré potential from twisted hexagonal boron nitride layers
Authors
Issue Date10-Aug-2023
PublisherNature Research
Citation
Nature Materials, 2023, v. 23, p. 65-70 How to Cite?
AbstractMoiré superlattices host a rich variety of correlated electronic phases. However, the moiré potential is fixed by interlayer coupling, and it is dependent on the nature of carriers and valleys. In contrast, it has been predicted that twisted hexagonal boron nitride (hBN) layers can impose a periodic electrostatic potential capable of engineering the properties of adjacent functional layers. Here, we show that this potential is described by a theory of electric polarization originating from the interfacial charge redistribution, validated by its dependence on supercell sizes and distance from the twisted interfaces. This enables controllability of the potential depth and profile by controlling the twist angles between the two interfaces. Employing this approach, we further demonstrate how the electrostatic potential from a twisted hBN substrate impedes exciton diffusion in semiconductor monolayers, suggesting opportunities for engineering the properties of adjacent functional layers using the surface potential of a twisted hBN substrate.
Persistent Identifierhttp://hdl.handle.net/10722/338627
ISSN
2023 Impact Factor: 37.2
2023 SCImago Journal Rankings: 14.231
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorKim, DS-
dc.contributor.authorDominguez, RC-
dc.contributor.authorMayorga-Luna, R-
dc.contributor.authorYe, D-
dc.contributor.authorEmbley, J-
dc.contributor.authorTan, T-
dc.contributor.authorNi, Y-
dc.contributor.authorLiu, Z-
dc.contributor.authorFord, M-
dc.contributor.authorGao, FY-
dc.contributor.authorArash, S-
dc.contributor.authorWatanabe, K-
dc.contributor.authorTaniguchi, T-
dc.contributor.authorKim, S-
dc.contributor.authorShih, CK-
dc.contributor.authorLai, K-
dc.contributor.authorYao, W-
dc.contributor.authorYang, L-
dc.contributor.authorLi, X-
dc.contributor.authorMiyahara, Y-
dc.date.accessioned2024-03-11T10:30:18Z-
dc.date.available2024-03-11T10:30:18Z-
dc.date.issued2023-08-10-
dc.identifier.citationNature Materials, 2023, v. 23, p. 65-70-
dc.identifier.issn1476-1122-
dc.identifier.urihttp://hdl.handle.net/10722/338627-
dc.description.abstractMoiré superlattices host a rich variety of correlated electronic phases. However, the moiré potential is fixed by interlayer coupling, and it is dependent on the nature of carriers and valleys. In contrast, it has been predicted that twisted hexagonal boron nitride (hBN) layers can impose a periodic electrostatic potential capable of engineering the properties of adjacent functional layers. Here, we show that this potential is described by a theory of electric polarization originating from the interfacial charge redistribution, validated by its dependence on supercell sizes and distance from the twisted interfaces. This enables controllability of the potential depth and profile by controlling the twist angles between the two interfaces. Employing this approach, we further demonstrate how the electrostatic potential from a twisted hBN substrate impedes exciton diffusion in semiconductor monolayers, suggesting opportunities for engineering the properties of adjacent functional layers using the surface potential of a twisted hBN substrate.-
dc.languageeng-
dc.publisherNature Research-
dc.relation.ispartofNature Materials-
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.titleElectrostatic moiré potential from twisted hexagonal boron nitride layers-
dc.typeArticle-
dc.identifier.doi10.1038/s41563-023-01637-7-
dc.identifier.scopuseid_2-s2.0-85167508265-
dc.identifier.volume23-
dc.identifier.spage65-
dc.identifier.epage70-
dc.identifier.eissn1476-4660-
dc.identifier.isiWOS:001045735800001-
dc.identifier.issnl1476-1122-

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