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Article: Influence of Er substitution on the properties of ZnO: A comprehensive study

TitleInfluence of Er substitution on the properties of ZnO: A comprehensive study
Authors
KeywordsEr-doped ZnO
Hall effect measurement
Intra-4f-transition emission
Photoluminescence
Pulsed laser deposition
Transparent conducting oxide
X-ray diffraction
Issue Date10-Nov-2023
PublisherElsevier
Citation
Ceramics International, 2023, v. 49, n. 24, p. 41071-41077 How to Cite?
AbstractEr-doped ZnO (Zn(1-x)Er(x)O) films with (002) preferential orientated wurtzite structure were fabricated on a c-plane sapphire substrate by pulsed laser deposition (PLD). The effects of Er composition, oxygen pressure during growth, and post-growth annealing on the films' structural, electrical, and optical properties were studied by employing a comprehensive spectroscopic approach. Er-doped ZnO films with a resistivity of 4 x 10(-4) Qcm, electron conductivity n(+)similar to 10(21) cm(-3), and high optical transmittance (>90%) were disclosed to be appropriate candidates for transparent conducting electrode applications. A shallow donor is reported to be associated with the ErZn defect, which is optically inactive. Er-doped ZnO samples grown with high Er composition and oxygen pressure don't show n(+) conductivity because of the formation of an O-rich Er-Zn-related compensating defect. Annealing at 750 C-degrees converts the Er-Zn shallow donor to another defect configuration, which is optically active for intra-4f-shell transition emissions, but no longer a shallow donor. The growth condition for maximizing the intra-4f-shell transition emission was also obtained.
Persistent Identifierhttp://hdl.handle.net/10722/337547
ISSN
2023 Impact Factor: 5.1
2023 SCImago Journal Rankings: 0.938
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorAzad, F-
dc.contributor.authorLuo, CQ-
dc.contributor.authorAzeem, W-
dc.contributor.authorCao, XZ-
dc.contributor.authorKuznetsov, A-
dc.contributor.authorShih, KM-
dc.contributor.authorLiao, CZ-
dc.contributor.authorLing, FCC-
dc.date.accessioned2024-03-11T10:21:44Z-
dc.date.available2024-03-11T10:21:44Z-
dc.date.issued2023-11-10-
dc.identifier.citationCeramics International, 2023, v. 49, n. 24, p. 41071-41077-
dc.identifier.issn0272-8842-
dc.identifier.urihttp://hdl.handle.net/10722/337547-
dc.description.abstractEr-doped ZnO (Zn(1-x)Er(x)O) films with (002) preferential orientated wurtzite structure were fabricated on a c-plane sapphire substrate by pulsed laser deposition (PLD). The effects of Er composition, oxygen pressure during growth, and post-growth annealing on the films' structural, electrical, and optical properties were studied by employing a comprehensive spectroscopic approach. Er-doped ZnO films with a resistivity of 4 x 10(-4) Qcm, electron conductivity n(+)similar to 10(21) cm(-3), and high optical transmittance (>90%) were disclosed to be appropriate candidates for transparent conducting electrode applications. A shallow donor is reported to be associated with the ErZn defect, which is optically inactive. Er-doped ZnO samples grown with high Er composition and oxygen pressure don't show n(+) conductivity because of the formation of an O-rich Er-Zn-related compensating defect. Annealing at 750 C-degrees converts the Er-Zn shallow donor to another defect configuration, which is optically active for intra-4f-shell transition emissions, but no longer a shallow donor. The growth condition for maximizing the intra-4f-shell transition emission was also obtained.-
dc.languageeng-
dc.publisherElsevier-
dc.relation.ispartofCeramics International-
dc.subjectEr-doped ZnO-
dc.subjectHall effect measurement-
dc.subjectIntra-4f-transition emission-
dc.subjectPhotoluminescence-
dc.subjectPulsed laser deposition-
dc.subjectTransparent conducting oxide-
dc.subjectX-ray diffraction-
dc.titleInfluence of Er substitution on the properties of ZnO: A comprehensive study-
dc.typeArticle-
dc.identifier.doi10.1016/j.ceramint.2022.10.224-
dc.identifier.scopuseid_2-s2.0-85140645424-
dc.identifier.volume49-
dc.identifier.issue24-
dc.identifier.spage41071-
dc.identifier.epage41077-
dc.identifier.eissn1873-3956-
dc.identifier.isiWOS:001112374800001-
dc.publisher.placeOXFORD-
dc.identifier.issnl0272-8842-

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