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Article: Spin Quantum dot Light‐Emitting Diodes Enabled by Two‐Dimensional Chiral Perovskite with Spin‐Dependent Carrier Transport

TitleSpin Quantum dot Light‐Emitting Diodes Enabled by Two‐Dimensional Chiral Perovskite with Spin‐Dependent Carrier Transport
Authors
Issue Date3-Oct-2023
PublisherWiley
Citation
Advanced Materials, 2023, v. 36, n. 5 How to Cite?
Abstract

Chiral-induced spin selectivity (CISS) effect provides innovative approach to spintronics and quantum-based devices for chiral materials. Different from the conventional ferromagnetic devices, the application of CISS effect is potential to operate under room temperature and zero applied magnetic field. Low dimensional chiral perovskites by introducing chiral amines are beginning to show significant CISS effect for spin injection, but research on chiral perovskites is still in its infancy, especially on spin-light emitting diode (spin-LED) construction. Here, the spin-QLEDs enabled by 2D chiral perovskites as CISS layer for spin-dependent carrier injection and CdSe/ZnS quantum dots (QDs) as light emitting layer are reported. The regulation pattern of the chirality and thickness of chiral perovskites, which affects the circularly polarized electroluminescence (CP-EL) emission of spin-QLED, is discovered. Notably, the spin injection polarization of 2D chiral perovskites is higher than 80% and the CP-EL asymmetric factor (gCP-EL) achieves up to 1.6 × 10−2. Consequently, this work opens up a new and effective approach for high-performance spin-LEDs.


Persistent Identifierhttp://hdl.handle.net/10722/337500
ISSN
2023 Impact Factor: 27.4
2023 SCImago Journal Rankings: 9.191

 

DC FieldValueLanguage
dc.contributor.authorWang, Qingqian-
dc.contributor.authorZhu, Hongmei-
dc.contributor.authorTan, Yangzhi-
dc.contributor.authorHao, Junjie-
dc.contributor.authorYe, Taikang-
dc.contributor.authorTang, Haodong-
dc.contributor.authorWang, Zhaojin-
dc.contributor.authorMa, Jingrui-
dc.contributor.authorSun, Jiayun-
dc.contributor.authorZhang, Tianqi-
dc.contributor.authorZheng, Fankai-
dc.contributor.authorZhang, Wenda-
dc.contributor.authorChoi, Anthony HW-
dc.contributor.authorChoy, Wallace CH-
dc.contributor.authorWu, Dan-
dc.contributor.authorSun, Xiao Wei-
dc.contributor.authorWang, Kai-
dc.date.accessioned2024-03-11T10:21:22Z-
dc.date.available2024-03-11T10:21:22Z-
dc.date.issued2023-10-03-
dc.identifier.citationAdvanced Materials, 2023, v. 36, n. 5-
dc.identifier.issn0935-9648-
dc.identifier.urihttp://hdl.handle.net/10722/337500-
dc.description.abstract<p>Chiral-induced spin selectivity (CISS) effect provides innovative approach to spintronics and quantum-based devices for chiral materials. Different from the conventional ferromagnetic devices, the application of CISS effect is potential to operate under room temperature and zero applied magnetic field. Low dimensional chiral perovskites by introducing chiral amines are beginning to show significant CISS effect for spin injection, but research on chiral perovskites is still in its infancy, especially on spin-light emitting diode (spin-LED) construction. Here, the spin-QLEDs enabled by 2D chiral perovskites as CISS layer for spin-dependent carrier injection and CdSe/ZnS quantum dots (QDs) as light emitting layer are reported. The regulation pattern of the chirality and thickness of chiral perovskites, which affects the circularly polarized electroluminescence (CP-EL) emission of spin-QLED, is discovered. Notably, the spin injection polarization of 2D chiral perovskites is higher than 80% and the CP-EL asymmetric factor (<em>g</em><sub>CP-EL</sub>) achieves up to 1.6 × 10<sup>−2</sup>. Consequently, this work opens up a new and effective approach for high-performance spin-LEDs.<br></p>-
dc.languageeng-
dc.publisherWiley-
dc.relation.ispartofAdvanced Materials-
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.titleSpin Quantum dot Light‐Emitting Diodes Enabled by Two‐Dimensional Chiral Perovskite with Spin‐Dependent Carrier Transport-
dc.typeArticle-
dc.identifier.doi10.1002/adma.202305604-
dc.identifier.volume36-
dc.identifier.issue5-
dc.identifier.eissn1521-4095-
dc.identifier.issnl0935-9648-

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