File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Niobium and rhenium doping in MoSe2 monolayer during molecular beam epitaxy: Shallow dopants and defect proliferation

TitleNiobium and rhenium doping in MoSe<inf>2</inf> monolayer during molecular beam epitaxy: Shallow dopants and defect proliferation
Authors
Issue Date2023
Citation
APL Materials, 2023, v. 11, n. 7, article no. 071113 How to Cite?
AbstractMonolayer (ML) transition-metal dichalcogenides (TMDs) have attracted a lot of research interest in recent years due to their many interesting properties as well as their application promises. Depending on the specific combinations of metals (e.g., Mo and W) with chalcogen elements (e.g., S, Se, and Te), binary TMDs exhibit a wide spectrum of physical characteristics, e.g., from metal to semiconductor and/or superconductor. Extension from binary to ternary compounds and alloys may offer even wider variations of properties and are thus of interest from both fundamental and practical points of view. In this work, we substitute Mo for niobium (Nb) and rhenium (Re) in ML MoSe2 during molecular-beam epitaxy and probe their effects on structural and electrical properties. We find that low-concentration Nb and Re in ML-MoSe2 are both shallow dopants, with Re being an electron donor and Nb acceptor, respectively. By changing Nb(Re)/Mo flux ratios, we can effectively tune the Fermi level by varying electron or hole concentrations in MoSe2. On the other hand, both Nb and Re are found to cause mirror-twin domain boundary defects to proliferate in MoSe2
Persistent Identifierhttp://hdl.handle.net/10722/336389
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorZhang, Junqiu-
dc.contributor.authorXia, Yipu-
dc.contributor.authorYu, Zhoubin-
dc.contributor.authorYue, Xingyu-
dc.contributor.authorJin, Yuanjun-
dc.contributor.authorYuan, Mengfei-
dc.contributor.authorFeng, Yue-
dc.contributor.authorLi, Bin-
dc.contributor.authorWang, Bo-
dc.contributor.authorHo, Wingkin-
dc.contributor.authorLiu, Chang-
dc.contributor.authorXu, Hu-
dc.contributor.authorJin, Chuanhong-
dc.contributor.authorXie, Maohai-
dc.date.accessioned2024-01-15T08:26:26Z-
dc.date.available2024-01-15T08:26:26Z-
dc.date.issued2023-
dc.identifier.citationAPL Materials, 2023, v. 11, n. 7, article no. 071113-
dc.identifier.urihttp://hdl.handle.net/10722/336389-
dc.description.abstractMonolayer (ML) transition-metal dichalcogenides (TMDs) have attracted a lot of research interest in recent years due to their many interesting properties as well as their application promises. Depending on the specific combinations of metals (e.g., Mo and W) with chalcogen elements (e.g., S, Se, and Te), binary TMDs exhibit a wide spectrum of physical characteristics, e.g., from metal to semiconductor and/or superconductor. Extension from binary to ternary compounds and alloys may offer even wider variations of properties and are thus of interest from both fundamental and practical points of view. In this work, we substitute Mo for niobium (Nb) and rhenium (Re) in ML MoSe2 during molecular-beam epitaxy and probe their effects on structural and electrical properties. We find that low-concentration Nb and Re in ML-MoSe2 are both shallow dopants, with Re being an electron donor and Nb acceptor, respectively. By changing Nb(Re)/Mo flux ratios, we can effectively tune the Fermi level by varying electron or hole concentrations in MoSe2. On the other hand, both Nb and Re are found to cause mirror-twin domain boundary defects to proliferate in MoSe2-
dc.languageeng-
dc.relation.ispartofAPL Materials-
dc.titleNiobium and rhenium doping in MoSe<inf>2</inf> monolayer during molecular beam epitaxy: Shallow dopants and defect proliferation-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1063/5.0152247-
dc.identifier.scopuseid_2-s2.0-85165534116-
dc.identifier.volume11-
dc.identifier.issue7-
dc.identifier.spagearticle no. 071113-
dc.identifier.epagearticle no. 071113-
dc.identifier.eissn2166-532X-
dc.identifier.isiWOS:001031327500003-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats