File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

TitleAtomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate
Authors
Keywordscross-sectional STEM
MoS -Au interaction 2
step-guided epitaxy
unidirectional domain alignment
van der Waals epitaxy
Issue Date2022
Citation
ACS Nano, 2022, v. 16, n. 10, p. 17356-17364 How to Cite?
AbstractA mechanistic understanding of interactions between atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) and their growth substrates is important for achieving the unidirectional alignment of nuclei and seamless stitching of 2D TMD domains and thus 2D wafers. In this work, we conduct a cross-sectional scanning transmission electron microscopy (STEM) study to investigate the atomic-scale nucleation and early stage growth behaviors of chemical vapor deposited monolayer (ML-) MoS2and molecular beam epitaxy ML-MoSe2on a Au(111) substrate. Statistical analysis reveals the majority of as-grown domains, i.e., ∼88% for MoS2and 90% for MoSe2, nucleate on surface terraces, with the rest (i.e., ∼12% for MoS2and 10% for MoSe2) on surface steps. Moreover, within the latter case, step-associated nucleation, ∼64% of them are terminated with a Mo-zigzag edge in connection with the Au surface steps, with the rest (∼36%) being S-zigzag edges. In conjunction with ab initio density functional theory calculations, the results confirm that van der Waals epitaxy, rather than the surface step guided epitaxy, plays deterministic roles for the realization of unidirectional ML-MoS2(MoSe2) domains on a Au(111) substrate. In contrast, surface steps, particularly their step height, are mainly responsible for the integrity and thickness of MoS2/MoSe2films. In detail, it is found that the lateral growth of monolayer thick MoS2/MoSe2domains only proceeds across mono-Au-atom high surface steps (∼2.4 Å), but fail for higher ones (bi-Au atom step and higher) during the growth. Our cross-sectional STEM study also confirms the existence of considerable compressive residual strain that reaches ∼3.0% for ML-MoS2/MoSe2domains on Au(111). The present study aims to understand the growth mechanism of 2D TMD wafers.
Persistent Identifierhttp://hdl.handle.net/10722/336338
ISSN
2023 Impact Factor: 15.8
2023 SCImago Journal Rankings: 4.593
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorDing, Degong-
dc.contributor.authorWang, Shuang-
dc.contributor.authorXia, Yipu-
dc.contributor.authorLi, Pai-
dc.contributor.authorHe, Daliang-
dc.contributor.authorZhang, Junqiu-
dc.contributor.authorZhao, Sunwen-
dc.contributor.authorYu, Guanghui-
dc.contributor.authorZheng, Yonghui-
dc.contributor.authorCheng, Yan-
dc.contributor.authorXie, Maohai-
dc.contributor.authorDing, Feng-
dc.contributor.authorJin, Chuanhong-
dc.date.accessioned2024-01-15T08:25:45Z-
dc.date.available2024-01-15T08:25:45Z-
dc.date.issued2022-
dc.identifier.citationACS Nano, 2022, v. 16, n. 10, p. 17356-17364-
dc.identifier.issn1936-0851-
dc.identifier.urihttp://hdl.handle.net/10722/336338-
dc.description.abstractA mechanistic understanding of interactions between atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) and their growth substrates is important for achieving the unidirectional alignment of nuclei and seamless stitching of 2D TMD domains and thus 2D wafers. In this work, we conduct a cross-sectional scanning transmission electron microscopy (STEM) study to investigate the atomic-scale nucleation and early stage growth behaviors of chemical vapor deposited monolayer (ML-) MoS2and molecular beam epitaxy ML-MoSe2on a Au(111) substrate. Statistical analysis reveals the majority of as-grown domains, i.e., ∼88% for MoS2and 90% for MoSe2, nucleate on surface terraces, with the rest (i.e., ∼12% for MoS2and 10% for MoSe2) on surface steps. Moreover, within the latter case, step-associated nucleation, ∼64% of them are terminated with a Mo-zigzag edge in connection with the Au surface steps, with the rest (∼36%) being S-zigzag edges. In conjunction with ab initio density functional theory calculations, the results confirm that van der Waals epitaxy, rather than the surface step guided epitaxy, plays deterministic roles for the realization of unidirectional ML-MoS2(MoSe2) domains on a Au(111) substrate. In contrast, surface steps, particularly their step height, are mainly responsible for the integrity and thickness of MoS2/MoSe2films. In detail, it is found that the lateral growth of monolayer thick MoS2/MoSe2domains only proceeds across mono-Au-atom high surface steps (∼2.4 Å), but fail for higher ones (bi-Au atom step and higher) during the growth. Our cross-sectional STEM study also confirms the existence of considerable compressive residual strain that reaches ∼3.0% for ML-MoS2/MoSe2domains on Au(111). The present study aims to understand the growth mechanism of 2D TMD wafers.-
dc.languageeng-
dc.relation.ispartofACS Nano-
dc.subjectcross-sectional STEM-
dc.subjectMoS -Au interaction 2-
dc.subjectstep-guided epitaxy-
dc.subjectunidirectional domain alignment-
dc.subjectvan der Waals epitaxy-
dc.titleAtomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/acsnano.2c08188-
dc.identifier.pmid36200750-
dc.identifier.scopuseid_2-s2.0-85139566719-
dc.identifier.volume16-
dc.identifier.issue10-
dc.identifier.spage17356-
dc.identifier.epage17364-
dc.identifier.eissn1936-086X-
dc.identifier.isiWOS:000874241200001-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats