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Article: Three-dimensional monolithic micro-LED display driven by atomically thin transistor matrix

TitleThree-dimensional monolithic micro-LED display driven by atomically thin transistor matrix
Authors
Issue Date2021
Citation
Nature Nanotechnology, 2021, v. 16, n. 11, p. 1231-1236 How to Cite?
AbstractTwo-dimensional materials are promising candidates for future electronics due to unmatched device performance at atomic limit and low-temperature heterogeneous integration. To adopt these emerging materials in computing and optoelectronic systems, back end of line (BEOL) integration with mainstream technologies is needed. Here, we show the integration of large-area MoS2 thin-film transistors (TFTs) with nitride micro light-emitting diodes (LEDs) through a BEOL process and demonstrate high-resolution displays. The MoS2 transistors exhibit median mobility of 54 cm2 V−1s −1, 210 μA μm−1 drive current and excellent uniformity. The TFTs can drive micrometre-sized LEDs to 7.1 × 107 cd m−2 luminance under low voltage. Comprehensive analysis on driving capability, response time, power consumption and modulation scheme indicates that MoS2 TFTs are suitable for a range of display applications up to the high resolution and brightness limit. We further demonstrate prototypical 32 × 32 active-matrix displays at 1,270 pixels-per-inch resolution. Moreover, our process is fully monolithic, low-temperature, scalable and compatible with microelectronic processing.
Persistent Identifierhttp://hdl.handle.net/10722/336287
ISSN
2023 Impact Factor: 38.1
2023 SCImago Journal Rankings: 14.577
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorMeng, Wanqing-
dc.contributor.authorXu, Feifan-
dc.contributor.authorYu, Zhihao-
dc.contributor.authorTao, Tao-
dc.contributor.authorShao, Liangwei-
dc.contributor.authorLiu, Lei-
dc.contributor.authorLi, Taotao-
dc.contributor.authorWen, Kaichuan-
dc.contributor.authorWang, Jianpu-
dc.contributor.authorHe, Longbing-
dc.contributor.authorSun, Litao-
dc.contributor.authorLi, Weisheng-
dc.contributor.authorNing, Hongkai-
dc.contributor.authorDai, Ningxuan-
dc.contributor.authorQin, Feng-
dc.contributor.authorTu, Xuecou-
dc.contributor.authorPan, Danfeng-
dc.contributor.authorHe, Shuzhuan-
dc.contributor.authorLi, Dabing-
dc.contributor.authorZheng, Youdou-
dc.contributor.authorLu, Yanqing-
dc.contributor.authorLiu, Bin-
dc.contributor.authorZhang, Rong-
dc.contributor.authorShi, Yi-
dc.contributor.authorWang, Xinran-
dc.date.accessioned2024-01-15T08:25:13Z-
dc.date.available2024-01-15T08:25:13Z-
dc.date.issued2021-
dc.identifier.citationNature Nanotechnology, 2021, v. 16, n. 11, p. 1231-1236-
dc.identifier.issn1748-3387-
dc.identifier.urihttp://hdl.handle.net/10722/336287-
dc.description.abstractTwo-dimensional materials are promising candidates for future electronics due to unmatched device performance at atomic limit and low-temperature heterogeneous integration. To adopt these emerging materials in computing and optoelectronic systems, back end of line (BEOL) integration with mainstream technologies is needed. Here, we show the integration of large-area MoS2 thin-film transistors (TFTs) with nitride micro light-emitting diodes (LEDs) through a BEOL process and demonstrate high-resolution displays. The MoS2 transistors exhibit median mobility of 54 cm2 V−1s −1, 210 μA μm−1 drive current and excellent uniformity. The TFTs can drive micrometre-sized LEDs to 7.1 × 107 cd m−2 luminance under low voltage. Comprehensive analysis on driving capability, response time, power consumption and modulation scheme indicates that MoS2 TFTs are suitable for a range of display applications up to the high resolution and brightness limit. We further demonstrate prototypical 32 × 32 active-matrix displays at 1,270 pixels-per-inch resolution. Moreover, our process is fully monolithic, low-temperature, scalable and compatible with microelectronic processing.-
dc.languageeng-
dc.relation.ispartofNature Nanotechnology-
dc.titleThree-dimensional monolithic micro-LED display driven by atomically thin transistor matrix-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1038/s41565-021-00966-5-
dc.identifier.pmid34504324-
dc.identifier.scopuseid_2-s2.0-85114628917-
dc.identifier.volume16-
dc.identifier.issue11-
dc.identifier.spage1231-
dc.identifier.epage1236-
dc.identifier.eissn1748-3395-
dc.identifier.isiWOS:000694618500001-

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