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Conference Paper: Reliability of Ultrathin High -\mathcal{K Dielectrics on 2D Semiconductors

TitleReliability of Ultrathin High -\mathcal{K Dielectrics on 2D Semiconductors
Authors
Yu, ZhihaoNing, HongkaiLi, WeishengLiu, LeiMeng, WanqingLuo, ZhongzhongCai, SonghuaLi, TaotaoWang, PengShi, YiXu, YongWang, Xinran
KeywordsHigh and Reliability
MoS2
Issue Date2021
Citation
2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021, 2021, article no. 9420995 How to Cite?
DOI: http://dx.doi.org/10.1109/EDTM50988.2021.9420995
AbstractDue to the absence of dangling bonds, the integration of ultra-thin dielectric on 2D semiconductors has become a huge challenge, and its reliability research has been blank before. For the first time, we report the high -\mathcal{K dielectric reliability on Mos2. By PTCDA crystal as interface layer, we demonstrated excellent reliability of HfO2/PTCDA gate stack, including EBD over 8.9 MV/cm, E BD}}\ ^{10\text{yrs} over 6.5 MV/cm and ultra-low BD rate, all of which show better reliability than HfO2/Si.
Persistent Identifierhttp://hdl.handle.net/10722/336282
ISI Accession Number ID
WOS:000675595800174

 

DC FieldValueLanguage
dc.contributor.authorYu, Zhihao-
dc.contributor.authorNing, Hongkai-
dc.contributor.authorLi, Weisheng-
dc.contributor.authorLiu, Lei-
dc.contributor.authorMeng, Wanqing-
dc.contributor.authorLuo, Zhongzhong-
dc.contributor.authorCai, Songhua-
dc.contributor.authorLi, Taotao-
dc.contributor.authorWang, Peng-
dc.contributor.authorShi, Yi-
dc.contributor.authorXu, Yong-
dc.contributor.authorWang, Xinran-
dc.date.accessioned2024-01-15T08:25:10Z-
dc.date.available2024-01-15T08:25:10Z-
dc.date.issued2021-
dc.identifier.citation2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021, 2021, article no. 9420995-
dc.identifier.urihttp://hdl.handle.net/10722/336282-
dc.description.abstractDue to the absence of dangling bonds, the integration of ultra-thin dielectric on 2D semiconductors has become a huge challenge, and its reliability research has been blank before. For the first time, we report the high -\mathcal{K dielectric reliability on Mos2. By PTCDA crystal as interface layer, we demonstrated excellent reliability of HfO2/PTCDA gate stack, including EBD over 8.9 MV/cm, E BD}}\ ^{10\text{yrs} over 6.5 MV/cm and ultra-low BD rate, all of which show better reliability than HfO2/Si.-
dc.languageeng-
dc.relation.ispartof2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021-
dc.subjectHigh and Reliability-
dc.subjectMoS2-
dc.titleReliability of Ultrathin High -\mathcal{K Dielectrics on 2D Semiconductors-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/EDTM50988.2021.9420995-
dc.identifier.scopuseid_2-s2.0-85106487718-
dc.identifier.spagearticle no. 9420995-
dc.identifier.epagearticle no. 9420995-
dc.identifier.isiWOS:000675595800174-

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