File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: A temperature stable (Ba1–xCex)(Ti1–x/2Mgx/2)O3 lead-free ceramic for X4D capacitors

TitleA temperature stable (Ba<inf>1–x</inf>Ce<inf>x</inf>)(Ti<inf>1–x/2</inf>Mg<inf>x/2</inf>)O<inf>3</inf> lead-free ceramic for X4D capacitors
Authors
KeywordsBaTiO 3
Capacitors
Dielectric property
Vacancies
X4D
Issue Date2020
Citation
Journal of Alloys and Compounds, 2020, v. 821, article no. 153480 How to Cite?
AbstractA novel dielectric ceramic {(Ba1–xCex)(Ti1–x/2Mgx/2)O3, x = 0.06, BCTM6} with excellent temperature stability (−55 to 65 °C, TCC ≤ ±3.3%, ε′RT ∼ 2242, tan δ < 0.023) was developed for X4D capacitors. Phase structure was found to transfer from tetragonal to cubic phase with increasing x and the solubility limitation of Ce/Mg was determined to be 0.10 by X-ray diffraction (XRD) for (Ba1–xCex)(Ti1–x/2Mgx/2)O3. The formation of 2CeBa•−MgTi’’ dipoles was believed to be responsible for the elimination of oxygen vacancies, leading to the low dielectric loss of BCTM6. An electron paramagnetic resonance (EPR) signal at g ∼ 1.98 suggested the ionization of Ba vacancies in (Ba1–xMgx)(Ti1–yCey)O3 (BMTC), indicative of the amphoteric behavior of Mg2+.
Persistent Identifierhttp://hdl.handle.net/10722/335845
ISSN
2023 Impact Factor: 5.8
2023 SCImago Journal Rankings: 1.103
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorHan, Dandan-
dc.contributor.authorWang, Changhao-
dc.contributor.authorLu, Dayong-
dc.contributor.authorHussain, Fayaz-
dc.contributor.authorWang, Dawei-
dc.contributor.authorMeng, Fanling-
dc.date.accessioned2023-12-28T08:49:11Z-
dc.date.available2023-12-28T08:49:11Z-
dc.date.issued2020-
dc.identifier.citationJournal of Alloys and Compounds, 2020, v. 821, article no. 153480-
dc.identifier.issn0925-8388-
dc.identifier.urihttp://hdl.handle.net/10722/335845-
dc.description.abstractA novel dielectric ceramic {(Ba1–xCex)(Ti1–x/2Mgx/2)O3, x = 0.06, BCTM6} with excellent temperature stability (−55 to 65 °C, TCC ≤ ±3.3%, ε′RT ∼ 2242, tan δ < 0.023) was developed for X4D capacitors. Phase structure was found to transfer from tetragonal to cubic phase with increasing x and the solubility limitation of Ce/Mg was determined to be 0.10 by X-ray diffraction (XRD) for (Ba1–xCex)(Ti1–x/2Mgx/2)O3. The formation of 2CeBa•−MgTi’’ dipoles was believed to be responsible for the elimination of oxygen vacancies, leading to the low dielectric loss of BCTM6. An electron paramagnetic resonance (EPR) signal at g ∼ 1.98 suggested the ionization of Ba vacancies in (Ba1–xMgx)(Ti1–yCey)O3 (BMTC), indicative of the amphoteric behavior of Mg2+.-
dc.languageeng-
dc.relation.ispartofJournal of Alloys and Compounds-
dc.subjectBaTiO 3-
dc.subjectCapacitors-
dc.subjectDielectric property-
dc.subjectVacancies-
dc.subjectX4D-
dc.titleA temperature stable (Ba<inf>1–x</inf>Ce<inf>x</inf>)(Ti<inf>1–x/2</inf>Mg<inf>x/2</inf>)O<inf>3</inf> lead-free ceramic for X4D capacitors-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.jallcom.2019.153480-
dc.identifier.scopuseid_2-s2.0-85076917829-
dc.identifier.volume821-
dc.identifier.spagearticle no. 153480-
dc.identifier.epagearticle no. 153480-
dc.identifier.isiWOS:000512369200015-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats