The characterization of crystalline particle growth in TiNi thin films

Abstract

Small-angle X-ray scattering (SAXS) and X-ray diffraction (XRD) have been used to investigate sputter-deposited TiNi films annealed at 773 K for 3, 8, 13, 15, 25 and 60 min. The specific interfacial area of the crystalline-amorphous two-phase system increases at the beginning of annealing, achieves a maximum after about 13 min and decreases on further annealing, whereas the radius of gyration of the crystalline particle increases during the annealing process. The prominent increase of the specific interfacial area and the slight increase of the radius of gyration of the crystalline particle at the beginning of annealing are correlated with the nucleation of the crystalline particle. The subsequent decrease of the specific interfacial area is correlated with the growth of the crystalline particles. © 2004 International Union of Crystallography Printed in Great Britain - all rights reserved.