File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Charge Density Wave Order and Electronic Phase Transitions in a Dilute d-Band Semiconductor

TitleCharge Density Wave Order and Electronic Phase Transitions in a Dilute d-Band Semiconductor
Authors
Keywordscharge density wave
phase transitions
quasi-1D chalcogenide
semiconductors
Issue Date2023
Citation
Advanced Materials, 2023 How to Cite?
AbstractAs one of the most fundamental physical phenomena, charge density wave (CDW) order predominantly occurs in metallic systems such as quasi-1D metals, doped cuprates, and transition metal dichalcogenides, where it is well understood in terms of Fermi surface nesting and electron–phonon coupling mechanisms. On the other hand, CDW phenomena in semiconducting systems, particularly at the low carrier concentration limit, are less common and feature intricate characteristics, which often necessitate the exploration of novel mechanisms, such as electron–hole coupling or Mott physics, to explain. In this study, an approach combining electrical transport, synchrotron X-ray diffraction, and density-functional theory calculations is used to investigate CDW order and a series of hysteretic phase transitions in a dilute d-band semiconductor, BaTiS3. These experimental and theoretical findings suggest that the observed CDW order and phase transitions in BaTiS3 may be attributed to both electron–phonon coupling and non-negligible electron–electron interactions in the system. This work highlights BaTiS3 as a unique platform to explore CDW physics and novel electronic phases in the dilute filling limit and opens new opportunities for developing novel electronic devices.
Persistent Identifierhttp://hdl.handle.net/10722/335465
ISSN
2023 Impact Factor: 27.4
2023 SCImago Journal Rankings: 9.191
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorChen, Huandong-
dc.contributor.authorZhao, Boyang-
dc.contributor.authorMutch, Josh-
dc.contributor.authorJung, Gwan Yeong-
dc.contributor.authorRen, Guodong-
dc.contributor.authorShabani, Sara-
dc.contributor.authorSeewald, Eric-
dc.contributor.authorNiu, Shanyuan-
dc.contributor.authorWu, Jiangbin-
dc.contributor.authorWang, Nan-
dc.contributor.authorSurendran, Mythili-
dc.contributor.authorSingh, Shantanu-
dc.contributor.authorLuo, Jiang-
dc.contributor.authorOhtomo, Sanae-
dc.contributor.authorGoh, Gemma-
dc.contributor.authorChakoumakos, Bryan C.-
dc.contributor.authorTeat, Simon J.-
dc.contributor.authorMelot, Brent-
dc.contributor.authorWang, Han-
dc.contributor.authorPasupathy, Abhay N.-
dc.contributor.authorMishra, Rohan-
dc.contributor.authorChu, Jiun Haw-
dc.contributor.authorRavichandran, Jayakanth-
dc.date.accessioned2023-11-17T08:26:09Z-
dc.date.available2023-11-17T08:26:09Z-
dc.date.issued2023-
dc.identifier.citationAdvanced Materials, 2023-
dc.identifier.issn0935-9648-
dc.identifier.urihttp://hdl.handle.net/10722/335465-
dc.description.abstractAs one of the most fundamental physical phenomena, charge density wave (CDW) order predominantly occurs in metallic systems such as quasi-1D metals, doped cuprates, and transition metal dichalcogenides, where it is well understood in terms of Fermi surface nesting and electron–phonon coupling mechanisms. On the other hand, CDW phenomena in semiconducting systems, particularly at the low carrier concentration limit, are less common and feature intricate characteristics, which often necessitate the exploration of novel mechanisms, such as electron–hole coupling or Mott physics, to explain. In this study, an approach combining electrical transport, synchrotron X-ray diffraction, and density-functional theory calculations is used to investigate CDW order and a series of hysteretic phase transitions in a dilute d-band semiconductor, BaTiS3. These experimental and theoretical findings suggest that the observed CDW order and phase transitions in BaTiS3 may be attributed to both electron–phonon coupling and non-negligible electron–electron interactions in the system. This work highlights BaTiS3 as a unique platform to explore CDW physics and novel electronic phases in the dilute filling limit and opens new opportunities for developing novel electronic devices.-
dc.languageeng-
dc.relation.ispartofAdvanced Materials-
dc.subjectcharge density wave-
dc.subjectphase transitions-
dc.subjectquasi-1D chalcogenide-
dc.subjectsemiconductors-
dc.titleCharge Density Wave Order and Electronic Phase Transitions in a Dilute d-Band Semiconductor-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/adma.202303283-
dc.identifier.scopuseid_2-s2.0-85174950074-
dc.identifier.eissn1521-4095-
dc.identifier.isiWOS:001094077000001-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats