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Article: Ultralow-k Amorphous Boron Nitride Based on Hexagonal Ring Stacking Framework for 300 mm Silicon Technology Platform

TitleUltralow-k Amorphous Boron Nitride Based on Hexagonal Ring Stacking Framework for 300 mm Silicon Technology Platform
Authors
Keywords300 mm Si wafers
amorphous boron nitride
hexagonal rings
high density
superior mechanical strength
ultralow k
Issue Date2022
Citation
Advanced Materials Technologies, 2022, v. 7, n. 10, article no. 2200022 How to Cite?
AbstractThe implementation of ultralow dielectric constant (k value ≈ 2) materials to reduce signal propagation delay in advanced electronic devices represents a critical challenge in next generations of microelectronics technologies. The introduction of well-stacked and low polarity molecules that do not compromise film density may lead to improvements and desirable material engineering, as conventional porous SiOx derivatives exhibit detrimental degradation of thermo-mechanical properties when their k values are further scaled down. This work presents a systematic engineering approach for controlling ultralow-k amorphous boron nitride (aBN) deposition on 300 mm Si platforms. The results indicate that aBN grown from borazine precursor exhibits ultralow dielectric constant ≈2, high density, excellent mechanical strength, and extended thermodynamic stability. Unintentional boron ion doping during plasma dissociation that may induce artificial reductions of k value on n-type substrates is alleviated by employing a remote microwave plasma process. Moreover, the adoption of low growth rate processes for ultralow-k aBN deposition is found to be critical to provide for the superior mechanical strength and high density, and is attributed to the formation of hexagonal ring stacking frameworks. These results pave the way and offer engineering solutions for new ultralow-k material introduction into future semiconductor manufacturing applications.
Persistent Identifierhttp://hdl.handle.net/10722/335397
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLin, Cheng Ming-
dc.contributor.authorHsu, Chuang Han-
dc.contributor.authorHuang, Wei Yu-
dc.contributor.authorAstié, Vincent-
dc.contributor.authorCheng, Po Hsien-
dc.contributor.authorLin, Yue Min-
dc.contributor.authorHu, Wei Shan-
dc.contributor.authorChen, Szu Hua-
dc.contributor.authorLin, Han Yu-
dc.contributor.authorLi, Ming Yang-
dc.contributor.authorMagyari-Kope, Blanka-
dc.contributor.authorYang, Chi Ming-
dc.contributor.authorDecams, Jean Manuel-
dc.contributor.authorLee, Tzu Lih-
dc.contributor.authorGui, Dong-
dc.contributor.authorWang, Han-
dc.contributor.authorWoon, Wei Yen-
dc.contributor.authorLin, Pinyen-
dc.contributor.authorWu, Jeff-
dc.contributor.authorLee, Jang Jung-
dc.contributor.authorLiao, Szuya Sandy-
dc.contributor.authorCao, Min-
dc.date.accessioned2023-11-17T08:25:33Z-
dc.date.available2023-11-17T08:25:33Z-
dc.date.issued2022-
dc.identifier.citationAdvanced Materials Technologies, 2022, v. 7, n. 10, article no. 2200022-
dc.identifier.urihttp://hdl.handle.net/10722/335397-
dc.description.abstractThe implementation of ultralow dielectric constant (k value ≈ 2) materials to reduce signal propagation delay in advanced electronic devices represents a critical challenge in next generations of microelectronics technologies. The introduction of well-stacked and low polarity molecules that do not compromise film density may lead to improvements and desirable material engineering, as conventional porous SiOx derivatives exhibit detrimental degradation of thermo-mechanical properties when their k values are further scaled down. This work presents a systematic engineering approach for controlling ultralow-k amorphous boron nitride (aBN) deposition on 300 mm Si platforms. The results indicate that aBN grown from borazine precursor exhibits ultralow dielectric constant ≈2, high density, excellent mechanical strength, and extended thermodynamic stability. Unintentional boron ion doping during plasma dissociation that may induce artificial reductions of k value on n-type substrates is alleviated by employing a remote microwave plasma process. Moreover, the adoption of low growth rate processes for ultralow-k aBN deposition is found to be critical to provide for the superior mechanical strength and high density, and is attributed to the formation of hexagonal ring stacking frameworks. These results pave the way and offer engineering solutions for new ultralow-k material introduction into future semiconductor manufacturing applications.-
dc.languageeng-
dc.relation.ispartofAdvanced Materials Technologies-
dc.subject300 mm Si wafers-
dc.subjectamorphous boron nitride-
dc.subjecthexagonal rings-
dc.subjecthigh density-
dc.subjectsuperior mechanical strength-
dc.subjectultralow k-
dc.titleUltralow-k Amorphous Boron Nitride Based on Hexagonal Ring Stacking Framework for 300 mm Silicon Technology Platform-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/admt.202200022-
dc.identifier.scopuseid_2-s2.0-85132611989-
dc.identifier.volume7-
dc.identifier.issue10-
dc.identifier.spagearticle no. 2200022-
dc.identifier.epagearticle no. 2200022-
dc.identifier.eissn2365-709X-
dc.identifier.isiWOS:000795801500001-

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