File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Temperature-Dependent Transport in Ultrathin Black Phosphorus Field-Effect Transistors

TitleTemperature-Dependent Transport in Ultrathin Black Phosphorus Field-Effect Transistors
Authors
Keywords2D materials
Black phosphorus
MOSFET
transistor
transport
two-dimensional
Issue Date2019
Citation
Nano Letters, 2019, v. 19, n. 1, p. 482-487 How to Cite?
AbstractWe studied the temperature-dependent transport properties of ultrathin black phosphorus (BP). We present measurements of BP Schottky barrier (SB) metal-oxide-semiconductor field-effect-transistors (MOSFETs) with various channel lengths, constructed from a single BP sample with nanoscale uniformity in thickness and width. The electrical characterization reveals a reversal in the temperature dependence of drain current as a function of gate voltage. This reversal indicates a transition in the charge conduction limiting mechanisms as the device is swept from the off-state into the on-state. In the off-state, charge transport is limited by thermionic emission over the energy barriers at the source/drain SB contacts, and drain current increases with temperature. In the on-state, carriers can easily tunnel across the SB at the contacts, and charge transport is limited by scattering in the channel. As a result, drain current decreases with temperature in the on-state, as scattering increases with temperature. Using Landauer transport theory, we derive a closed-form expression for thermionic emission current in SB-MOSFETs with two-dimensional channels. We use this expression to extract the SB height at metal contact interface with BP and demonstrate the impact of scattering on the extraction. We then use a comprehensive BP SB-MOSFET model to analyze on-state current as a function of temperature and demonstrate the effects of charged impurity and phonon scattering on the transport properties of BP through extractions of mobility at fixed carrier density.
Persistent Identifierhttp://hdl.handle.net/10722/335323
ISSN
2023 Impact Factor: 9.6
2023 SCImago Journal Rankings: 3.411
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorYan, Xiaodong-
dc.contributor.authorWang, Han-
dc.contributor.authorSanchez Esqueda, Ivan-
dc.date.accessioned2023-11-17T08:24:55Z-
dc.date.available2023-11-17T08:24:55Z-
dc.date.issued2019-
dc.identifier.citationNano Letters, 2019, v. 19, n. 1, p. 482-487-
dc.identifier.issn1530-6984-
dc.identifier.urihttp://hdl.handle.net/10722/335323-
dc.description.abstractWe studied the temperature-dependent transport properties of ultrathin black phosphorus (BP). We present measurements of BP Schottky barrier (SB) metal-oxide-semiconductor field-effect-transistors (MOSFETs) with various channel lengths, constructed from a single BP sample with nanoscale uniformity in thickness and width. The electrical characterization reveals a reversal in the temperature dependence of drain current as a function of gate voltage. This reversal indicates a transition in the charge conduction limiting mechanisms as the device is swept from the off-state into the on-state. In the off-state, charge transport is limited by thermionic emission over the energy barriers at the source/drain SB contacts, and drain current increases with temperature. In the on-state, carriers can easily tunnel across the SB at the contacts, and charge transport is limited by scattering in the channel. As a result, drain current decreases with temperature in the on-state, as scattering increases with temperature. Using Landauer transport theory, we derive a closed-form expression for thermionic emission current in SB-MOSFETs with two-dimensional channels. We use this expression to extract the SB height at metal contact interface with BP and demonstrate the impact of scattering on the extraction. We then use a comprehensive BP SB-MOSFET model to analyze on-state current as a function of temperature and demonstrate the effects of charged impurity and phonon scattering on the transport properties of BP through extractions of mobility at fixed carrier density.-
dc.languageeng-
dc.relation.ispartofNano Letters-
dc.subject2D materials-
dc.subjectBlack phosphorus-
dc.subjectMOSFET-
dc.subjecttransistor-
dc.subjecttransport-
dc.subjecttwo-dimensional-
dc.titleTemperature-Dependent Transport in Ultrathin Black Phosphorus Field-Effect Transistors-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/acs.nanolett.8b04308-
dc.identifier.pmid30518214-
dc.identifier.scopuseid_2-s2.0-85059840767-
dc.identifier.volume19-
dc.identifier.issue1-
dc.identifier.spage482-
dc.identifier.epage487-
dc.identifier.eissn1530-6992-
dc.identifier.isiWOS:000455561300062-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats