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Article: Graphene/In 2 S 3 van der Waals Heterostructure for Ultrasensitive Photodetection

TitleGraphene/In <inf>2</inf> S <inf>3</inf> van der Waals Heterostructure for Ultrasensitive Photodetection
Authors
Keywordsfield effect transistor
graphene
In S 2 3
photodetector
two-dimensional material
van der Waals heterostructure
Issue Date2018
Citation
ACS Photonics, 2018, v. 5, n. 12, p. 4912-4919 How to Cite?
AbstractAs an emerging 2D nonlayered material, natural defective β-In 2 S 3 nanosheets have drawn attention because of their unique defective structure and broad optical detection range. Stacking n-type In 2 S 3 with other p-type 2D materials can produce an atomically sharp interface with van der Waals interaction, which may lead to high performance in (opto)electronics. In this study, we fabricated a van der Waals heterostructure composed of In 2 S 3 and graphene via the dry transfer method. Scanning Kelvin probe force microscopy revealed a significant potential difference at the interface of the heterostructure, thereby endowing it with good diode characteristics. The back-gate field effect transistor based on the graphene/In 2 S 3 heterostructure exhibited excellent gate-tunable current-rectifying characteristic with n-type semiconductor behavior. A photodetector based on the graphene/In 2 S 3 heterostructure showed excellent response to visible light. Particularly, an ultrahigh responsivity of 795 A/W and an external quantum efficiency of 2440% are recorded under the illumination of 405 nm light and can be further increased to 8570 A/W and 26200% with a positive gate voltage of 60 V. The excellent optical responsive performance is attributed to the synergy of photoconductive and photogating effects. These intriguing results suggest that the graphene/In 2 S 3 heterostructure has prospective applications in future electronic and optoelectronic devices.
Persistent Identifierhttp://hdl.handle.net/10722/335321
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLu, Jianting-
dc.contributor.authorWei, Aixiang-
dc.contributor.authorZhao, Yu-
dc.contributor.authorTao, Lili-
dc.contributor.authorYang, Yibing-
dc.contributor.authorZheng, Zhaoqiang-
dc.contributor.authorWang, Han-
dc.contributor.authorLuo, Dongxiang-
dc.contributor.authorLiu, Jun-
dc.contributor.authorTao, Li-
dc.contributor.authorLi, Hao-
dc.contributor.authorLi, Jingbo-
dc.contributor.authorXu, Jian Bin-
dc.date.accessioned2023-11-17T08:24:54Z-
dc.date.available2023-11-17T08:24:54Z-
dc.date.issued2018-
dc.identifier.citationACS Photonics, 2018, v. 5, n. 12, p. 4912-4919-
dc.identifier.urihttp://hdl.handle.net/10722/335321-
dc.description.abstractAs an emerging 2D nonlayered material, natural defective β-In 2 S 3 nanosheets have drawn attention because of their unique defective structure and broad optical detection range. Stacking n-type In 2 S 3 with other p-type 2D materials can produce an atomically sharp interface with van der Waals interaction, which may lead to high performance in (opto)electronics. In this study, we fabricated a van der Waals heterostructure composed of In 2 S 3 and graphene via the dry transfer method. Scanning Kelvin probe force microscopy revealed a significant potential difference at the interface of the heterostructure, thereby endowing it with good diode characteristics. The back-gate field effect transistor based on the graphene/In 2 S 3 heterostructure exhibited excellent gate-tunable current-rectifying characteristic with n-type semiconductor behavior. A photodetector based on the graphene/In 2 S 3 heterostructure showed excellent response to visible light. Particularly, an ultrahigh responsivity of 795 A/W and an external quantum efficiency of 2440% are recorded under the illumination of 405 nm light and can be further increased to 8570 A/W and 26200% with a positive gate voltage of 60 V. The excellent optical responsive performance is attributed to the synergy of photoconductive and photogating effects. These intriguing results suggest that the graphene/In 2 S 3 heterostructure has prospective applications in future electronic and optoelectronic devices.-
dc.languageeng-
dc.relation.ispartofACS Photonics-
dc.subjectfield effect transistor-
dc.subjectgraphene-
dc.subjectIn S 2 3-
dc.subjectphotodetector-
dc.subjecttwo-dimensional material-
dc.subjectvan der Waals heterostructure-
dc.titleGraphene/In <inf>2</inf> S <inf>3</inf> van der Waals Heterostructure for Ultrasensitive Photodetection-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/acsphotonics.8b01070-
dc.identifier.scopuseid_2-s2.0-85058794328-
dc.identifier.volume5-
dc.identifier.issue12-
dc.identifier.spage4912-
dc.identifier.epage4919-
dc.identifier.eissn2330-4022-
dc.identifier.isiWOS:000454463000026-

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