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Article: Epitaxial growth and electrical properties of VO2 on [LaAlO3]0.3[Sr2AlTaO6]0.7 (111) substrate

TitleEpitaxial growth and electrical properties of VO<inf>2</inf> on [LaAlO<inf>3</inf>]<inf>0.3</inf>[Sr<inf>2</inf>AlTaO<inf>6</inf>]<inf>0.7</inf> (111) substrate
Authors
Issue Date2018
Citation
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 2018, v. 36, n. 6, article no. 061506 How to Cite?
AbstractThe authors report the epitaxial growth and the electrical properties, especially the metal-to-insulator transition, of vanadium dioxide (VO2) thin films synthesized on [LaAlO3]0.3[Sr2AlTaO6]0.7 (LSAT) (111) (LSAT) substrates by pulsed laser deposition. X-ray diffraction studies show that the epitaxial relationship between the VO2 thin films and LSAT substrate is given as VO2(020)||LSAT(111) and V O 2 [001] | | LSAT [11 2]. The authors observed a sharp 4 orders of magnitude change in the longitudinal resistance for the VO2 thin films around the transition temperature. The authors also measured distinct Raman spectra below and above the transition point indicating a concomitant structural transition between the insulator and metallic phases, in agreement with past investigations.
Persistent Identifierhttp://hdl.handle.net/10722/335317
ISSN
2023 Impact Factor: 2.4
2023 SCImago Journal Rankings: 0.569
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLiu, Yang-
dc.contributor.authorNiu, Shanyuan-
dc.contributor.authorOrvis, Thomas-
dc.contributor.authorZhang, Haimeng-
dc.contributor.authorZhao, Huan-
dc.contributor.authorWang, Han-
dc.contributor.authorRavichandran, Jayakanth-
dc.date.accessioned2023-11-17T08:24:53Z-
dc.date.available2023-11-17T08:24:53Z-
dc.date.issued2018-
dc.identifier.citationJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 2018, v. 36, n. 6, article no. 061506-
dc.identifier.issn0734-2101-
dc.identifier.urihttp://hdl.handle.net/10722/335317-
dc.description.abstractThe authors report the epitaxial growth and the electrical properties, especially the metal-to-insulator transition, of vanadium dioxide (VO2) thin films synthesized on [LaAlO3]0.3[Sr2AlTaO6]0.7 (LSAT) (111) (LSAT) substrates by pulsed laser deposition. X-ray diffraction studies show that the epitaxial relationship between the VO2 thin films and LSAT substrate is given as VO2(020)||LSAT(111) and V O 2 [001] | | LSAT [11 2]. The authors observed a sharp 4 orders of magnitude change in the longitudinal resistance for the VO2 thin films around the transition temperature. The authors also measured distinct Raman spectra below and above the transition point indicating a concomitant structural transition between the insulator and metallic phases, in agreement with past investigations.-
dc.languageeng-
dc.relation.ispartofJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films-
dc.titleEpitaxial growth and electrical properties of VO<inf>2</inf> on [LaAlO<inf>3</inf>]<inf>0.3</inf>[Sr<inf>2</inf>AlTaO<inf>6</inf>]<inf>0.7</inf> (111) substrate-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1116/1.5045358-
dc.identifier.scopuseid_2-s2.0-85054399845-
dc.identifier.volume36-
dc.identifier.issue6-
dc.identifier.spagearticle no. 061506-
dc.identifier.epagearticle no. 061506-
dc.identifier.eissn1520-8559-
dc.identifier.isiWOS:000451272500027-

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